Specifications: Part Number:R5207ANDTL; Manufacturer:LAPIS Technology; Description:MOSFET N-CH 525V 7A CPT3; RoHs Status:; ROHS3 Compliant; Nkesp Part Number:73D-R5207ANDTL; Part Status28598 pcs

Vgs(th) (Max) @ Id:4.5V @ 1mA

Vgs (Max):±30V

Technology:MOSFET (Metal Oxide)

Supplier Device Package:CPT3

Series:-

Rds On (Max) @ Id, Vgs:1Ohm @ 3.5A, 10V

Power Dissipation (Max):40W (Tc)

Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

Package:Tape & Reel (TR)

Operating Temperature:150°C (TJ)

Mounting Type:Surface Mount

Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V

FET Type:N-Channel

FET Feature:-

Drive Voltage (Max Rds On, Min Rds On):10V

Drain to Source Voltage (Vdss):525 V

Current - Continuous Drain (Id) @ 25°C:7A (Ta)

Base Product Number:R5207

In stock: 28598 pcs

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Product Comparison

Part Number	R5205PND3FRATL	R5205CNDTL	CPH3350-TL-H	IPW60R125P6XKSA1
Manufacturer	Rohm Semiconductor	Rohm Semiconductor	onsemi	Infineon Technologies
Mounting Type	-	-	-	-
FET Type	-	-	-	-
Package	-	Bulk	Bulk	Bulk
Input Capacitance (Ciss) (Max) @ Vds	-	-	-	-
FET Feature	-	-	-	-
Drain to Source Voltage (Vdss)	-	-	-	-
Current - Continuous Drain (Id) @ 25°C	-	-	-	-
Supplier Device Package	-	-	-	-
Technology	-	-	-	-
Power Dissipation (Max)	-	-	-	-
Base Product Number	-	-	-	-
Series	-	*	*	*
Rds On (Max) @ Id, Vgs	-	-	-	-
Vgs(th) (Max) @ Id	-	-	-	-
Vgs (Max)	-	-	-	-
Gate Charge (Qg) (Max) @ Vgs	-	-	-	-
Operating Temperature	-	-	-	-
Drive Voltage (Max Rds On, Min Rds On)	-	-	-	-
Package / Case	-	-	-	-