GP2M020A060N

MOSFET N-CH 600V 20A TO3PN

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RFQ
Specifications
Part Number:GP2M020A060N
Manufacturer:SemiQ
Description:MOSFET N-CH 600V 20A TO3PN
RoHs Status:
Lead free / RoHS Compliant
Nkesp Part Number:73D-GP2M020A060N
Part Status3777 pcs
Manufacturer:SemiQ
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-3PN
Series:-
Rds On (Max) @ Id, Vgs:330 mOhm @ 10A, 10V
Power Dissipation (Max):347W (Tc)
Packaging:Tube
Package / Case:TO-3P-3, SC-65-3
Other Names:1560-1214-1
1560-1214-1-ND
1560-1214-5
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:3184pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:70nC @ 10V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600V
Detailed Description:N-Channel 600V 20A (Tc) 347W (Tc) Through Hole TO-3PN
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
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In stock: 3777 pcs

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Product Comparison

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ManufacturerGlobal Power Technologies GroupGlobal Power Technologies GroupGlobal Power Technologies GroupGlobal Power Technologies Group
Rds On (Max) @ Id, Vgs----
Lead Free Status / RoHS Status----
Gate Charge (Qg) (Max) @ Vgs----
Detailed Description----
Operating Temperature----
Drain to Source Voltage (Vdss)----
FET Feature----
Power Dissipation (Max)----
Current - Continuous Drain (Id) @ 25°C----
Mounting Type----
Input Capacitance (Ciss) (Max) @ Vds----
Series-***
FET Type----
Packaging----
Other Names----
Vgs (Max)----
Drive Voltage (Max Rds On, Min Rds On)----
Supplier Device Package----
Vgs(th) (Max) @ Id----
Package / Case----
Moisture Sensitivity Level (MSL)----
Technology----

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