RM18P100HDE

MOSFET P-CH 100V 18A TO263-2

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Specifications
Part Number:RM18P100HDE
Manufacturer:Rectron USA
Description:MOSFET P-CH 100V 18A TO263-2
RoHs Status:
Nkesp Part Number:73D-RM18P100HDE
Part Status48180 pcs
Manufacturer:Rectron USA
Vgs(th) (Max) @ Id:3V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-263-2
Series:-
Rds On (Max) @ Id, Vgs:100mOhm @ 16A, 10V
Power Dissipation (Max):70W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
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In stock: 48180 pcs

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Product Comparison

Part Number RM18P100HDE
RM18P100HDE
RM1A4N150S6
RM1A4N150S6
RM185N30DF
RM185N30DF
RM15N650T2
RM15N650T2
ManufacturerRectron USARectron USARectron USARectron USA
Series----
Vgs(th) (Max) @ Id3V @ 250µA4V @ 250µA2V @ 250µA3.5V @ 250µA
Vgs (Max)±20V±20V±20V±30V
Power Dissipation (Max)70W (Tc)1.56W (Tc)95W (Tc)145W (Tc)
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tube
Drive Voltage (Max Rds On, Min Rds On)10V6V, 10V4.5V, 10V10V
FET TypeP-ChannelN-ChannelN-ChannelN-Channel
Operating Temperature-55°C ~ 150°C (TJ)-50°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Supplier Device PackageTO-263-2SOT-23-68-DFN (5x6)TO-220-3
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V700 pF @ 25 V8800 pF @ 15 V1360 pF @ 50 V
Drain to Source Voltage (Vdss)100 V150 V30 V650 V
Current - Continuous Drain (Id) @ 25°C18A (Tc)1.4A (Tc)185A (Tc)15A (Tc)
Mounting TypeSurface MountSurface MountSurface MountThrough Hole
FET Feature----
Rds On (Max) @ Id, Vgs100mOhm @ 16A, 10V480mOhm @ 1A, 10V1.4mOhm @ 95A, 10V260mOhm @ 8A, 10V
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABSOT-23-68-PowerVDFNTO-220-3

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