FQPF19N20T

MOSFET N-CH 100V 11.8A TO220F

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Specifications
Part Number:FQPF19N20T
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 100V 11.8A TO220F
Nkesp Part Number:73D-FQPF19N20T
Part Status4341 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220F-3
Series:QFET®
Rds On (Max) @ Id, Vgs:150mOhm @ 5.9A, 10V
Power Dissipation (Max):50W (Tc)
Package / Case:TO-220-3 Full Pack
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:11.8A (Tc)
Base Product Number:FQPF1
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In stock: 4341 pcs

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Data sheet

Product Comparison

Part Number FQPF19N20T
FQPF19N20T
FQPF19N20
FQPF19N20
FQPF1N60T
FQPF1N60T
FQPF18N50V2SDTU
FQPF18N50V2SDTU
ManufactureronsemiFairchild SemiconductoronsemiFairchild Semiconductor
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V1600 pF @ 25 V150 pF @ 25 V3290 pF @ 25 V
Package / CaseTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full Pack
PackageTubeBulkTubeBulk
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Current - Continuous Drain (Id) @ 25°C11.8A (Tc)11.8A (Tc)900mA (Tc)18A (Tj)
Rds On (Max) @ Id, Vgs150mOhm @ 5.9A, 10V150mOhm @ 5.9A, 10V11.5Ohm @ 450mA, 10V265mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V40 nC @ 10 V6 nC @ 10 V55 nC @ 10 V
Base Product NumberFQPF1-FQPF1-
Vgs(th) (Max) @ Id5V @ 250µA5V @ 250µA5V @ 250µA5V @ 250µA
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Power Dissipation (Max)50W (Tc)50W (Tc)21W (Tc)69W (Tc)
SeriesQFET®QFET®QFET®QFET®
Supplier Device PackageTO-220F-3TO-220F-3TO-220F-3TO-220F-3
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)±30V±30V±30V±30V
Drain to Source Voltage (Vdss)100 V200 V600 V500 V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
FET Feature----

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