Name: Goford Semiconductor 18N20
Brand: Goford Semiconductor
SKU: 18N20
Price: 0.22 USD
Availability: InStock

Specifications: Part Number:18N20; Manufacturer:Goford Semiconductor; Description:N 200V, RD(MAX)<0.16@10V,VTH1.0V; RoHs Status:; ROHS3 Compliant; Nkesp Part Number:73D-18N20; Part Status64356 pcs

Vgs(th) (Max) @ Id:3V @ 250µA

Vgs (Max):±30V

Technology:MOSFET (Metal Oxide)

Supplier Device Package:TO-252

Series:18N20

Rds On (Max) @ Id, Vgs:160mOhm @ 9A, 10V

Power Dissipation (Max):65.8W (Tc)

Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

Package:Tape & Reel (TR)

Operating Temperature:-55°C ~ 150°C (TJ)

Mounting Type:Surface Mount

Input Capacitance (Ciss) (Max) @ Vds:836 pF @ 25 V

Gate Charge (Qg) (Max) @ Vgs:17.7 nC @ 10 V

FET Type:N-Channel

FET Feature:-

Drive Voltage (Max Rds On, Min Rds On):10V

Drain to Source Voltage (Vdss):200 V

Current - Continuous Drain (Id) @ 25°C:18A (Tj)

Download Details PDF:

18N20.pdf

In stock: 64356 pcs

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Data sheet

Product Comparison

Part Number	18N20F	18N20J	SPB80N08S2-07	IXTN17N120L
Manufacturer	Goford Semiconductor	Goford Semiconductor	Infineon Technologies	IXYS
Rds On (Max) @ Id, Vgs	-	-	-	-
Drive Voltage (Max Rds On, Min Rds On)	-	-	-	-
Mounting Type	-	-	-	-
Package / Case	-	-	-	-
Drain to Source Voltage (Vdss)	-	-	-	-
Supplier Device Package	-	-	-	-
Gate Charge (Qg) (Max) @ Vgs	-	-	-	-
Input Capacitance (Ciss) (Max) @ Vds	-	-	-	-
Series	-	*	*	*
FET Type	-	-	-	-
Technology	-	-	-	-
Package	-	Bulk	Bulk	Bulk
FET Feature	-	-	-	-
Vgs (Max)	-	-	-	-
Operating Temperature	-	-	-	-
Vgs(th) (Max) @ Id	-	-	-	-
Power Dissipation (Max)	-	-	-	-
Current - Continuous Drain (Id) @ 25°C	-	-	-	-