Name: Goford Semiconductor 18N10
Brand: Goford Semiconductor
SKU: 18N10
Price: 0.11 USD
Availability: InStock

Specifications: Part Number:18N10; Manufacturer:Goford Semiconductor; Description:N100V,RD(MAX)<53M@10V,RD(MAX)<63; RoHs Status:; ROHS3 Compliant; Nkesp Part Number:73D-18N10; Part Status116104 pcs

Vgs(th) (Max) @ Id:3V @ 250µA

Vgs (Max):±20V

Technology:MOSFET (Metal Oxide)

Supplier Device Package:TO-252 (DPAK)

Series:-

Rds On (Max) @ Id, Vgs:53mOhm @ 10A, 10V

Power Dissipation (Max):62.5W

Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

Package:Tape & Reel (TR)

Operating Temperature:-55°C ~ 150°C (TJ)

Mounting Type:Surface Mount

Input Capacitance (Ciss) (Max) @ Vds:1318 pF @ 50 V

Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V

FET Type:N-Channel

Drain to Source Voltage (Vdss):100 V

Current - Continuous Drain (Id) @ 25°C:25A

Download Details PDF:

18N10.pdf

In stock: 116104 pcs

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Data sheet

Product Comparison

Part Number	18N20F	IPP100N08N3GXKSA1	18N20J	18N20
Manufacturer	Goford Semiconductor	Infineon Technologies	Goford Semiconductor	Goford Semiconductor
Package / Case	-	-	-	-
Series	-	*	*	*
Current - Continuous Drain (Id) @ 25°C	-	-	-	-
Mounting Type	-	-	-	-
Gate Charge (Qg) (Max) @ Vgs	-	-	-	-
Rds On (Max) @ Id, Vgs	-	-	-	-
Power Dissipation (Max)	-	-	-	-
Vgs (Max)	-	-	-	-
Technology	-	-	-	-
Operating Temperature	-	-	-	-
Vgs(th) (Max) @ Id	-	-	-	-
Supplier Device Package	-	-	-	-
Input Capacitance (Ciss) (Max) @ Vds	-	-	-	-
Package	-	Bulk	Bulk	Bulk
Drain to Source Voltage (Vdss)	-	-	-	-
FET Type	-	-	-	-