VS-FB190SA10

MOSFET N-CH 100V 190A SOT227

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RFQ
Specifications
Part Number:VS-FB190SA10
Manufacturer:Vishay General Semiconductor – Diodes Division
Description:MOSFET N-CH 100V 190A SOT227
RoHs Status:
ROHS3 Compliant
Nkesp Part Number:73D-VS-FB190SA10
Part Status4347 pcs
Manufacturer:Vishay General Semiconductor – Diodes Division
Vgs(th) (Max) @ Id:4.35V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-227
Series:-
Rds On (Max) @ Id, Vgs:6.5mOhm @ 180A, 10V
Power Dissipation (Max):568W (Tc)
Package / Case:SOT-227-4, miniBLOC
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds:10700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:250 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:190A (Tj)
Base Product Number:FB190
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In stock: 4347 pcs

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Vishay General Semiconductor - Diodes Division
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Data sheet

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