IRL3302SPBF

MOSFET N-CH 20V 39A D2PAK

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Specifications
Part Number:IRL3302SPBF
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 20V 39A D2PAK
Nkesp Part Number:73D-IRL3302SPBF
Part Status3921 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:700mV @ 250µA (Min)
Vgs (Max):±10V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:D2PAK
Series:HEXFET®
Rds On (Max) @ Id, Vgs:20mOhm @ 23A, 7V
Power Dissipation (Max):57W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 4.5 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 7V
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:39A (Tc)
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In stock: 3921 pcs

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Product Comparison

Part Number IRL3302SPBF
IRL3302SPBF
IRL3302PBF
IRL3302PBF
IRL3303D1S
IRL3303D1S
IRL3303D1STRR
IRL3303D1STRR
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesVishay Siliconix
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs31 nC @ 4.5 V31 nC @ 4.5 V26 nC @ 4.5 V26 nC @ 4.5 V
Rds On (Max) @ Id, Vgs20mOhm @ 23A, 7V20mOhm @ 23A, 7V26mOhm @ 20A, 10V26mOhm @ 20A, 10V
FET Feature----
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss)20 V20 V30 V30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 7V4.5V, 7V4.5V, 10V4.5V, 10V
PackageTubeTubeTubeTape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C39A (Tc)39A (Tc)38A (Tc)38A (Tc)
Supplier Device PackageD2PAKTO-220ABD2PAKD²PAK (TO-263)
SeriesHEXFET®HEXFET®HEXFET®-
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-220-3TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max)57W (Tc)57W (Tc)68W (Tc)68W (Tc)
Vgs (Max)±10V±10V±16V±16V
Vgs(th) (Max) @ Id700mV @ 250µA (Min)700mV @ 250µA (Min)1V @ 250µA1V @ 250µA
Mounting TypeSurface MountThrough HoleSurface MountSurface Mount
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 15 V1300 pF @ 15 V870 pF @ 25 V870 pF @ 25 V

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