IPD26N06S2L35ATMA2

MOSFET N-CH 55V 30A TO252-31

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Specifications
Part Number:IPD26N06S2L35ATMA2
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 55V 30A TO252-31
RoHs Status:
ROHS3 Compliant
Nkesp Part Number:73D-IPD26N06S2L35ATMA2
Part Status29671 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:2V @ 26µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO252-3-11
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:35mOhm @ 13A, 10V
Power Dissipation (Max):68W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:621 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Base Product Number:IPD26N06
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In stock: 29671 pcs

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Product Comparison

Part Number IPD26N06S2L35ATMA1
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ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Current - Continuous Drain (Id) @ 25°C----
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Gate Charge (Qg) (Max) @ Vgs----
FET Type----
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Drain to Source Voltage (Vdss)----
Package-BulkBulkBulk
Supplier Device Package----
FET Feature----
Drive Voltage (Max Rds On, Min Rds On)----
Rds On (Max) @ Id, Vgs----
Input Capacitance (Ciss) (Max) @ Vds----
Base Product Number----
Mounting Type----
Power Dissipation (Max)----

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