BUK952R8-60E,127

MOSFET N-CH 60V 120A TO220AB

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Specifications
Part Number:BUK952R8-60E,127
Manufacturer:Freescale / NXP Semiconductors
Description:MOSFET N-CH 60V 120A TO220AB
RoHs Status:
Nkesp Part Number:73D-BUK952R8-60E,127
Part Status4625 pcs
Manufacturer:Freescale / NXP Semiconductors
Vgs(th) (Max) @ Id:2.1V @ 1mA
Vgs (Max):±10V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:TrenchMOS™
Rds On (Max) @ Id, Vgs:2.6 mOhm @ 25A, 10V
Power Dissipation (Max):349W (Tc)
Packaging:Tube
Package / Case:TO-220-3
Other Names:568-9862-5
934066522127
BUK952R860E127
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Moisture Sensitivity Level (MSL):1 (Unlimited)
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds:17450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:120nC @ 5V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Drain to Source Voltage (Vdss):60V
Detailed Description:N-Channel 60V 120A (Tc) 349W (Tc) Through Hole TO-220AB
Current - Continuous Drain (Id) @ 25°C:120A (Tc)

In stock: 4625 pcs

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Product Comparison

Part Number BUK952R8-60E,127
BUK952R8-60E,127
BUK953R2-40B,127
BUK953R2-40B,127
BUK9535-55,127
BUK9535-55,127
BUK9535-55A,127
BUK9535-55A,127
ManufacturerNXP Semiconductors / FreescaleNexperia USA Inc.NXP Semiconductors / FreescaleNexperia USA Inc.
Supplier Device PackageTO-220ABTO-220ABTO-220ABTO-220AB
Rds On (Max) @ Id, Vgs2.6 mOhm @ 25A, 10V2.8mOhm @ 25A, 10V35 mOhm @ 17A, 5V32mOhm @ 25A, 10V
Other Names568-9862-5
934066522127
BUK952R860E127
-934050420127-
Vgs(th) (Max) @ Id2.1V @ 1mA2V @ 1mA2V @ 1mA2V @ 1mA
Moisture Sensitivity Level (MSL)1 (Unlimited)-1 (Unlimited)-
Drive Voltage (Max Rds On, Min Rds On)5V, 10V4.5V, 10V5V4.5V, 10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)100A (Tc)34A (Tc)34A (Tc)
Drain to Source Voltage (Vdss)60V40 V55V55 V
Package / CaseTO-220-3TO-220-3TO-220-3TO-220-3
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
PackagingTube-Tube-
SeriesTrenchMOS™TrenchMOS™TrenchMOS™TrenchMOS™
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Vgs (Max)±10V±15V±10V±10V
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds17450pF @ 25V10502 pF @ 25 V1400pF @ 25V1173 pF @ 25 V
FET Feature----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs120nC @ 5V94 nC @ 5 V--
Lead Free Status / RoHS StatusLead free / RoHS Compliant-Lead free / RoHS Compliant-
Power Dissipation (Max)349W (Tc)300W (Tc)85W (Tc)85W (Tc)
Detailed DescriptionN-Channel 60V 120A (Tc) 349W (Tc) Through Hole TO-220AB-N-Channel 55V 34A (Tc) 85W (Tc) Through Hole TO-220AB-

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