APTC80DA15T1G

MOSFET N-CH 800V 28A SP1

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RFQ
Specifications
Part Number:APTC80DA15T1G
Manufacturer:Microsemi
Description:MOSFET N-CH 800V 28A SP1
Nkesp Part Number:73D-APTC80DA15T1G
Part Status3738 pcs
Manufacturer:Microsemi
Vgs(th) (Max) @ Id:3.9V @ 2mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SP1
Series:-
Rds On (Max) @ Id, Vgs:150mOhm @ 14A, 10V
Power Dissipation (Max):277W (Tc)
Package / Case:SP1
Package:Bulk
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds:4507 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:180 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:28A (Tc)
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In stock: 3738 pcs

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Data sheet

Product Comparison

Part Number APTC80DA15T1G
APTC80DA15T1G
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APTC60TAM21SCTPAG
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ManufacturerMicrosemi CorporationMicrosemi CorporationMicrochip TechnologyMicrochip Technology
Operating Temperature-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
FET TypeN-ChannelN-Channel--
Current - Continuous Drain (Id) @ 25°C28A (Tc)28A (Tc)28A116A
Drive Voltage (Max Rds On, Min Rds On)10V10V--
Input Capacitance (Ciss) (Max) @ Vds4507 pF @ 25 V4507 pF @ 25 V4507pF @ 25V13000pF @ 100V
Vgs(th) (Max) @ Id3.9V @ 2mA3.9V @ 2mA3.9V @ 2mA3.6V @ 6mA
Power Dissipation (Max)277W (Tc)277W (Tc)--
Mounting TypeChassis MountChassis MountChassis MountChassis Mount
Vgs (Max)±30V±30V--
Rds On (Max) @ Id, Vgs150mOhm @ 14A, 10V150mOhm @ 14A, 10V150mOhm @ 14A, 10V21mOhm @ 88A, 10V
Drain to Source Voltage (Vdss)800 V800 V800V600V
Series---CoolMOS™
PackageBulkBulkBulkBulk
FET Feature----
Package / CaseSP1SP1SP1Module
Supplier Device PackageSP1SP1SP1SP6-P
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V180 nC @ 10 V180nC @ 10V580nC @ 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)

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