In stock: 4034 pcs
| Part Number |
IPB160N04S2L03ATMA1
|
IPB16CN10N G
 |
IPB180N03S4L-H0
 |
IPB14N03LA G
|
|
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | |
| Series | OptiMOS™ | OptiMOS™ | CoolMOS™ | OptiMOS™ | |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 80A, 10V | 16.5mOhm @ 53A, 10V | 0.95mOhm @ 100A, 10V | 13.6mOhm @ 30A, 10V | |
| Base Product Number | IPB160N | IPB16C | IPB180 | IPB14N | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 4.5V, 10V | 4.5V, 10V | |
| Drain to Source Voltage (Vdss) | 40 V | 100 V | 30 V | 25 V | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Vgs(th) (Max) @ Id | 2V @ 250µA | 4V @ 61µA | 2.2V @ 200µA | 2V @ 20µA | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 15 V | 3220 pF @ 50 V | 23000 pF @ 25 V | 1043 pF @ 15 V | |
| Vgs (Max) | ±20V | ±20V | ±16V | ±20V | |
| Supplier Device Package | PG-TO263-7-3 | PG-TO263-3 | PG-TO263-7-3-10 | PG-TO263-3-2 | |
| Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 5 V | 48 nC @ 10 V | 300 nC @ 10 V | 8.3 nC @ 5 V | |
| Package | Tape & Reel (TR) | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) | 53A (Tc) | 180A (Tc) | 30A (Tc) | |
| Power Dissipation (Max) | 300W (Tc) | 100W (Tc) | 250W (Tc) | 46W (Tc) | |
| FET Feature | - | - | - | - | |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
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