IPB160N04S203ATMA4

MOSFET N-CH 40V 160A TO263-7

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Part Number:IPB160N04S203ATMA4
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 40V 160A TO263-7
RoHs Status:
Nkesp Part Number:73D-IPB160N04S203ATMA4
Part Status5035 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-7-3
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:2.9mOhm @ 60A, 10V
Power Dissipation (Max):300W (Tc)
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Base Product Number:IPB160
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In stock: 5035 pcs

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Product Comparison

Part Number IPB160N04S203ATMA4
IPB160N04S203ATMA4
IPB17N25S3100ATMA1
IPB17N25S3100ATMA1
IPB147N03LGATMA1
IPB147N03LGATMA1
IPB14N03LAT
IPB14N03LAT
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
FET Feature----
Input Capacitance (Ciss) (Max) @ Vds5300 pF @ 25 V1500 pF @ 25 V1000 pF @ 15 V1043 pF @ 15 V
Rds On (Max) @ Id, Vgs2.9mOhm @ 60A, 10V100mOhm @ 17A, 10V14.7mOhm @ 20A, 10V13.6mOhm @ 30A, 10V
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max)300W (Tc)107W (Tc)31W (Tc)46W (Tc)
Vgs (Max)±20V±20V±20V±20V
SeriesOptiMOS™Automotive, AEC-Q101, OptiMOS™OptiMOS™OptiMOS™
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Supplier Device PackagePG-TO263-7-3PG-TO263-3-2PG-TO263-3PG-TO263-3-2
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Base Product NumberIPB160IPB17N25IPB147NIPB14N
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V19 nC @ 10 V10 nC @ 10 V8.3 nC @ 5 V
Vgs(th) (Max) @ Id4V @ 250µA4V @ 54µA2.2V @ 250µA2V @ 20µA
Drain to Source Voltage (Vdss)40 V250 V30 V25 V
Current - Continuous Drain (Id) @ 25°C160A (Tc)17A (Tc)20A (Tc)30A (Tc)
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)10V10V4.5V, 10V4.5V, 10V

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