IPA50R250CP

IPA50R250 - 500V COOLMOS N-CHANN

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Part Number:IPA50R250CP
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:IPA50R250 - 500V COOLMOS N-CHANN
Nkesp Part Number:73D-IPA50R250CP
Part Status16640 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:3.5V @ 520µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO220-3-31
Series:CoolMOS™
Rds On (Max) @ Id, Vgs:250mOhm @ 7.8A, 10V
Power Dissipation (Max):33W (Tc)
Package / Case:TO-220-3 Full Pack
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1420 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)

In stock: 16640 pcs

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Product Comparison

Part Number IPA50R250CP
IPA50R250CP
IPA50R199CPXKSA1
IPA50R199CPXKSA1
IPA50R190CEXKSA2
IPA50R190CEXKSA2
IPA180N10N3GXKSA1
IPA180N10N3GXKSA1
ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Supplier Device PackagePG-TO220-3-31PG-TO220-3-31PG-TO220-FPPG-TO220-FP
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full Pack
Drain to Source Voltage (Vdss)500 V500 V500 V100 V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)
Vgs (Max)±20V±20V±20V±20V
Rds On (Max) @ Id, Vgs250mOhm @ 7.8A, 10V199mOhm @ 9.9A, 10V190mOhm @ 6.2A, 13V18mOhm @ 28A, 10V
PackageBulkTubeTubeTube
Input Capacitance (Ciss) (Max) @ Vds1420 pF @ 100 V1800 pF @ 100 V1137 pF @ 100 V1800 pF @ 50 V
SeriesCoolMOS™CoolMOS™CoolMOS™ CEOptiMOS™
Drive Voltage (Max Rds On, Min Rds On)10V10V13V6V, 10V
Power Dissipation (Max)33W (Tc)139W (Tc)32W (Tc)30W (Tc)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
FET Feature----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs36 nC @ 10 V45 nC @ 10 V47.2 nC @ 10 V25 nC @ 10 V
Vgs(th) (Max) @ Id3.5V @ 520µA3.5V @ 660µA3.5V @ 510µA3.5V @ 35µA
Current - Continuous Drain (Id) @ 25°C13A (Tc)17A (Tc)18.5A (Tc)28A (Tc)

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