TSM060N03PQ33

30V, 62A, SINGLE N-CHANNEL POWER

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RFQ
Specifications
Part Number:TSM060N03PQ33
Manufacturer:Taiwan Semiconductor
Description:30V, 62A, SINGLE N-CHANNEL POWER
RoHs Status:
Nkesp Part Number:73D-TSM060N03PQ33
Part Status26112 pcs
Manufacturer:Taiwan Semiconductor
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-PDFN (3.1x3.1)
Series:-
Rds On (Max) @ Id, Vgs:6mOhm @ 15A, 10V
Power Dissipation (Max):2.3W (Ta), 40W (Tc)
Package / Case:8-PowerWDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:1342 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:25.4 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta), 62A (Tc)
Base Product Number:TSM060
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In stock: 26112 pcs

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Taiwan Semiconductor Corporation
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Data sheet

Product Comparison

Part Number TSM060N03PQ33
TSM060N03PQ33
TSM05N03CW RPG
TSM05N03CW RPG
TSM060NB06LCZ
TSM060NB06LCZ
TSM070NA04LCR RLG
TSM070NA04LCR RLG
ManufacturerTaiwan Semiconductor CorporationTaiwan Semiconductor CorporationTaiwan Semiconductor CorporationTaiwan Semiconductor Corporation
Input Capacitance (Ciss) (Max) @ Vds1342 pF @ 15 V555 pF @ 15 V6273 pF @ 30 V1469 pF @ 20 V
Package / Case8-PowerWDFNTO-261-4, TO-261AATO-220-38-PowerTDFN
Current - Continuous Drain (Id) @ 25°C15A (Ta), 62A (Tc)5A (Ta)13A (Ta), 111A (Tc)91A (Tc)
Base Product NumberTSM060TSM05TSM060TSM070
Vgs (Max)±20V±20V±20V±20V
Power Dissipation (Max)2.3W (Ta), 40W (Tc)3W (Ta)2W (Ta), 156W (Tc)113W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Mounting TypeSurface MountSurface MountThrough HoleSurface Mount
Rds On (Max) @ Id, Vgs6mOhm @ 15A, 10V60mOhm @ 5A, 10V6mOhm @ 13A, 10V7mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V30 V60 V40 V
Gate Charge (Qg) (Max) @ Vgs25.4 nC @ 10 V7 nC @ 5 V107 nC @ 10 V23.5 nC @ 10 V
Supplier Device Package8-PDFN (3.1x3.1)SOT-223TO-2208-PDFN (5x6)
Series----
FET Feature----
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
PackageTape & Reel (TR)Tape & Reel (TR)TubeTape & Reel (TR)
Vgs(th) (Max) @ Id2.5V @ 250µA3V @ 250µA2.5V @ 250µA2.5V @ 250µA

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