Name: Goford Semiconductor G66
Brand: Goford Semiconductor
SKU: G66
Price: 0.04 USD
Availability: InStock

Specifications: Part Number:G66; Manufacturer:Goford Semiconductor; Description:P-16V,-5.8A,RD(MAX)<[email protected],VT; RoHs Status:; ROHS3 Compliant; Nkesp Part Number:73D-G66; Part Status343910 pcs

Vgs(th) (Max) @ Id:1V @ 250µA

Vgs (Max):±8V

Technology:MOSFET (Metal Oxide)

Supplier Device Package:6-DFN (2x2)

Series:G

Rds On (Max) @ Id, Vgs:45mOhm @ 4.1A, 4.5V

Power Dissipation (Max):1.7W (Ta)

Package / Case:6-WDFN Exposed Pad

Package:Tape & Reel (TR)

Operating Temperature:-55°C ~ 150°C (TJ)

Mounting Type:Surface Mount

Input Capacitance (Ciss) (Max) @ Vds:740 pF @ 4 V

Gate Charge (Qg) (Max) @ Vgs:7.8 nC @ 4.5 V

FET Type:P-Channel

FET Feature:-

Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V

Drain to Source Voltage (Vdss):16 V

Current - Continuous Drain (Id) @ 25°C:5.8A (Ta)

Download Details PDF:

G66.pdf

In stock: 343910 pcs

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Data sheet

Product Comparison

Part Number	2SK3662(F)	IPW60R230P6FKSA1	GSFC0603	TSM60N900CI C0G
Manufacturer	Toshiba Semiconductor and Storage	Infineon Technologies	Good-Ark Semiconductor	Taiwan Semiconductor Corporation
FET Feature	-	-	-	-
Rds On (Max) @ Id, Vgs	-	-	-	-
Series	-	*	*	*
Package / Case	-	-	-	-
Power Dissipation (Max)	-	-	-	-
Drain to Source Voltage (Vdss)	-	-	-	-
Drive Voltage (Max Rds On, Min Rds On)	-	-	-	-
Vgs (Max)	-	-	-	-
Current - Continuous Drain (Id) @ 25°C	-	-	-	-
Mounting Type	-	-	-	-
Vgs(th) (Max) @ Id	-	-	-	-
Input Capacitance (Ciss) (Max) @ Vds	-	-	-	-
Operating Temperature	-	-	-	-
Supplier Device Package	-	-	-	-
Package	-	Bulk	Bulk	Bulk
FET Type	-	-	-	-
Technology	-	-	-	-
Gate Charge (Qg) (Max) @ Vgs	-	-	-	-