FQI12N60CTU

MOSFET N-CH 600V 12A I2PAK

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RFQ
Specifications
Part Number:FQI12N60CTU
Manufacturer:Fairchild (onsemi)
Description:MOSFET N-CH 600V 12A I2PAK
RoHs Status:
Nkesp Part Number:73D-FQI12N60CTU
Part Status24993 pcs
Manufacturer:Fairchild (onsemi)
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:I2PAK (TO-262)
Series:QFET®
Rds On (Max) @ Id, Vgs:650mOhm @ 6A, 10V
Power Dissipation (Max):3.13W (Ta), 225W (Tc)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:2290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)

In stock: 24993 pcs

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Product Comparison

Part Number FQI12N60CTU
FQI12N60CTU
FQI15P12TU
FQI15P12TU
FQI11P06TU
FQI11P06TU
FQI13N50CTU
FQI13N50CTU
ManufacturerFairchild Semiconductoronsemionsemionsemi
FET TypeN-ChannelP-ChannelP-ChannelN-Channel
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AATO-262-3 Long Leads, I²Pak, TO-262AA
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Power Dissipation (Max)3.13W (Ta), 225W (Tc)3.75W (Ta), 100W (Tc)3.13W (Ta), 53W (Tc)195W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
SeriesQFET®QFET®QFET®QFET®
Current - Continuous Drain (Id) @ 25°C12A (Tc)15A (Tc)11.4A (Tc)13A (Tc)
Rds On (Max) @ Id, Vgs650mOhm @ 6A, 10V200mOhm @ 7.5A, 10V175mOhm @ 5.7A, 10V480mOhm @ 6.5A, 10V
Supplier Device PackageI2PAK (TO-262)I2PAK (TO-262)I2PAK (TO-262)I2PAK (TO-262)
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Input Capacitance (Ciss) (Max) @ Vds2290 pF @ 25 V1100 pF @ 25 V550 pF @ 25 V2055 pF @ 25 V
PackageTubeTubeTubeTube
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET Feature----
Vgs (Max)±30V±30V±25V±30V
Drain to Source Voltage (Vdss)600 V120 V60 V500 V
Gate Charge (Qg) (Max) @ Vgs63 nC @ 10 V38 nC @ 10 V17 nC @ 10 V56 nC @ 10 V

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