In stock: 24993 pcs
Part Number |
FQI12N60CTU
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FQI15P12TU
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FQI11P06TU
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FQI13N50CTU
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Manufacturer | Fairchild Semiconductor | onsemi | onsemi | onsemi | |
FET Type | N-Channel | P-Channel | P-Channel | N-Channel | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | |
Power Dissipation (Max) | 3.13W (Ta), 225W (Tc) | 3.75W (Ta), 100W (Tc) | 3.13W (Ta), 53W (Tc) | 195W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | |
Series | QFET® | QFET® | QFET® | QFET® | |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | 15A (Tc) | 11.4A (Tc) | 13A (Tc) | |
Rds On (Max) @ Id, Vgs | 650mOhm @ 6A, 10V | 200mOhm @ 7.5A, 10V | 175mOhm @ 5.7A, 10V | 480mOhm @ 6.5A, 10V | |
Supplier Device Package | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) | I2PAK (TO-262) | |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 25 V | 1100 pF @ 25 V | 550 pF @ 25 V | 2055 pF @ 25 V | |
Package | Tube | Tube | Tube | Tube | |
Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
FET Feature | - | - | - | - | |
Vgs (Max) | ±30V | ±30V | ±25V | ±30V | |
Drain to Source Voltage (Vdss) | 600 V | 120 V | 60 V | 500 V | |
Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V | 38 nC @ 10 V | 17 nC @ 10 V | 56 nC @ 10 V |
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