TK12J60W,S1VE(S

MOSFET N-CH 600V 11.5A TO3P

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RFQ
Specifications
Part Number:TK12J60W,S1VE(S
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Description:MOSFET N-CH 600V 11.5A TO3P
Nkesp Part Number:73D-TK12J60W,S1VE(S
Part Status4603 pcs
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Vgs(th) (Max) @ Id:3.7V @ 600µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-3P(N)
Series:-
Rds On (Max) @ Id, Vgs:300mOhm @ 5.8A, 10V
Power Dissipation (Max):110W (Tc)
Package / Case:TO-3P-3, SC-65-3
Package:Tray
Operating Temperature:150°C
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Ta)
Base Product Number:TK12J60

In stock: 4603 pcs

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Product Comparison

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ManufacturerToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and Storage
Technology----
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Current - Continuous Drain (Id) @ 25°C----
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FET Type----
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Vgs(th) (Max) @ Id----
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