In stock: 80640 pcs
Part Number |
GT650N15K
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BUK7E5R2-100E,127-NXP
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GT6K2P10KH
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IPA50R800CE
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Manufacturer | Goford Semiconductor | NXP USA Inc. | Goford Semiconductor | Infineon Technologies | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-3 Full Pack | |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 150 V | 100 V | 100 V | 500 V | |
Vgs(th) (Max) @ Id | 4.5V @ 250µA | 4V @ 1mA | 3V @ 250µA | 3.5V @ 130µA | |
Series | - | Automotive, AEC-Q101, TrenchMOS™ | - | CoolMOS™ | |
Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | 180 nC @ 10 V | 10 nC @ 10 V | 12.4 nC @ 10 V | |
FET Feature | - | - | - | - | |
FET Type | N-Channel | N-Channel | P-Channel | N-Channel | |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) | 120A (Tc) | 4.3A (Tc) | 5A (Tc) | |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Through Hole | |
Power Dissipation (Max) | 68W (Tc) | 349W (Tc) | 25W (Tc) | 26.4W (Tc) | |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 13V | |
Supplier Device Package | TO-252 | I2PAK | TO-252 | PG-TO220-FP | |
Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 75 V | 11810 pF @ 25 V | 247 pF @ 50 V | 280 pF @ 100 V | |
Package | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tube | |
Rds On (Max) @ Id, Vgs | 65mOhm @ 10A, 10V | 5.2mOhm @ 25A, 10V | 670mOhm @ 1A, 10V | 800mOhm @ 1.5A, 13V |
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