IRF9530

MOSFET P-CH 100V 12A TO220AB

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RFQ
Specifications
Part Number:IRF9530
Manufacturer:Harris Corporation
Description:MOSFET P-CH 100V 12A TO220AB
Nkesp Part Number:73D-IRF9530
Part Status22814 pcs
Manufacturer:Harris Corporation
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220AB
Series:-
Rds On (Max) @ Id, Vgs:300mOhm @ 6.5A, 10V
Power Dissipation (Max):75W (Tc)
Package / Case:TO-220-3
Package:Bulk
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)

In stock: 22814 pcs

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Product Comparison

Part Number IRF9530
IRF9530
IRF9520STRRPBF
IRF9520STRRPBF
IRF9530L
IRF9530L
IRF9530NSTRLPBF
IRF9530NSTRLPBF
ManufacturerHarris CorporationVishay SiliconixVishay SiliconixInfineon Technologies
Package / CaseTO-220-3TO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-262-3 Long Leads, I²Pak, TO-262AATO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Series---HEXFET®
FET Feature----
FET TypeP-ChannelP-ChannelP-ChannelP-Channel
Mounting TypeThrough HoleSurface MountThrough HoleSurface Mount
Vgs (Max)±20V±20V±20V±20V
Power Dissipation (Max)75W (Tc)3.7W (Ta), 60W (Tc)-3.8W (Ta), 79W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C12A (Tc)6.8A (Tc)12A (Tc)14A (Tc)
Rds On (Max) @ Id, Vgs300mOhm @ 6.5A, 10V600mOhm @ 4.1A, 10V300mOhm @ 7.2A, 10V200mOhm @ 8.4A, 10V
PackageBulkTape & Reel (TR)TubeTape & Reel (TR)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V100 V100 V100 V
Input Capacitance (Ciss) (Max) @ Vds500 pF @ 25 V390 pF @ 25 V860 pF @ 25 V760 pF @ 25 V
Supplier Device PackageTO-220ABD²PAK (TO-263)I2PAKD2PAK
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V18 nC @ 10 V38 nC @ 10 V58 nC @ 10 V
Vgs(th) (Max) @ Id4V @ 250µA4V @ 250µA4V @ 250µA4V @ 250µA

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