IPB180N03S4LH0ATMA1

MOSFET N-CH 30V 180A TO263-7

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Specifications
Part Number:IPB180N03S4LH0ATMA1
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Description:MOSFET N-CH 30V 180A TO263-7
RoHs Status:
ROHS3 Compliant
Nkesp Part Number:73D-IPB180N03S4LH0ATMA1
Part Status4002 pcs
Manufacturer:Cypress Semiconductor (Infineon Technologies)
Vgs(th) (Max) @ Id:2.2V @ 200µA
Vgs (Max):±16V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PG-TO263-7-3
Series:OptiMOS™
Rds On (Max) @ Id, Vgs:0.95mOhm @ 100A, 10V
Power Dissipation (Max):250W (Tc)
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:23000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:300 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Base Product Number:IPB180
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In stock: 4002 pcs

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Product Comparison

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ManufacturerInfineon TechnologiesInfineon TechnologiesInfineon TechnologiesInfineon Technologies
Package-BulkBulkBulk
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Technology----
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Vgs (Max)----
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Series-***
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Base Product Number----
Power Dissipation (Max)----
Drive Voltage (Max Rds On, Min Rds On)----
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