ZVP4525E6TC

MOSFET P-CH 250V 197MA SOT23-6

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Specifications
Part Number:ZVP4525E6TC
Manufacturer:Diodes Incorporated
Description:MOSFET P-CH 250V 197MA SOT23-6
RoHs Status:
Nkesp Part Number:73D-ZVP4525E6TC
Part Status4586 pcs
Manufacturer:Diodes Incorporated
Vgs(th) (Max) @ Id:2V @ 1mA
Vgs (Max):±40V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:SOT-23-6
Series:-
Rds On (Max) @ Id, Vgs:14Ohm @ 200mA, 10V
Power Dissipation (Max):1.1W (Ta)
Package / Case:SOT-23-6
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:73 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:3.45 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):3.5V, 10V
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:197mA (Ta)
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In stock: 4586 pcs

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Product Comparison

Part Number ZVP4525E6TC
ZVP4525E6TC
ZVP4424GTC
ZVP4424GTC
ZVP4105ASTOA
ZVP4105ASTOA
ZVP4105ASTOB
ZVP4105ASTOB
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Drive Voltage (Max Rds On, Min Rds On)3.5V, 10V3.5V, 10V5V5V
Vgs (Max)±40V±40V±20V±20V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds73 pF @ 25 V200 pF @ 25 V40 pF @ 25 V40 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C197mA (Ta)480mA (Ta)175mA (Ta)175mA (Ta)
Drain to Source Voltage (Vdss)250 V240 V50 V50 V
FET TypeP-ChannelP-ChannelP-ChannelP-Channel
Rds On (Max) @ Id, Vgs14Ohm @ 200mA, 10V9Ohm @ 200mA, 10V10Ohm @ 100mA, 5V10Ohm @ 100mA, 5V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
Supplier Device PackageSOT-23-6SOT-223-3E-Line (TO-92 compatible)E-Line (TO-92 compatible)
Series----
Mounting TypeSurface MountSurface MountThrough HoleThrough Hole
Package / CaseSOT-23-6TO-261-4, TO-261AAE-Line-3E-Line-3
Vgs(th) (Max) @ Id2V @ 1mA2V @ 1mA2V @ 1mA2V @ 1mA
Power Dissipation (Max)1.1W (Ta)2.5W (Ta)625mW (Ta)625mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs3.45 nC @ 10 V---
FET Feature----

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