WPB4002-1E

MOSFET N-CH 600V 23A TO3P-3L

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Specifications
Part Number:WPB4002-1E
Manufacturer:AMI Semiconductor/onsemi
Description:MOSFET N-CH 600V 23A TO3P-3L
Nkesp Part Number:73D-WPB4002-1E
Part Status3250 pcs
Manufacturer:AMI Semiconductor/onsemi
Vgs(th) (Max) @ Id:-
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-3P-3L
Series:-
Rds On (Max) @ Id, Vgs:360mOhm @ 11.5A, 10V
Power Dissipation (Max):2.5W (Ta), 220W (Tc)
Package / Case:TO-3P-3, SC-65-3
Package:Tube
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:2200 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs:84 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:23A (Ta)
Base Product Number:WPB40
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In stock: 3250 pcs

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Data sheet

Product Comparison

Part Number WPB4002-1E
WPB4002-1E
IRFP048PBF
IRFP048PBF
WPB4002
WPB4002
FDMS86180
FDMS86180
ManufactureronsemiVishay Siliconixonsemionsemi
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 30 V2400 pF @ 25 V2200 pF @ 30 V6215 pF @ 50 V
Mounting TypeThrough HoleThrough HoleThrough HoleSurface Mount
PackageTubeTubeTrayTape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C23A (Ta)70A (Tc)23A (Ta)151A (Tc)
Base Product NumberWPB40IRFP048WPB40FDMS86
Operating Temperature150°C (TJ)-55°C ~ 175°C (TJ)150°C (TJ)-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs360mOhm @ 11.5A, 10V18mOhm @ 44A, 10V360mOhm @ 11.5A, 10V3.2mOhm @ 67A, 10V
FET Feature----
Power Dissipation (Max)2.5W (Ta), 220W (Tc)190W (Tc)2.5W (Ta), 220W (Tc)138W (Tc)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Vgs (Max)±30V±20V±30V±20V
Series---PowerTrench®
Package / CaseTO-3P-3, SC-65-3TO-247-3TO-3P-3, SC-65-38-PowerTDFN
Supplier Device PackageTO-3P-3LTO-247ACTO-3PBPower56
Drain to Source Voltage (Vdss)600 V60 V600 V100 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)10V10V10V6V, 10V
Vgs(th) (Max) @ Id-4V @ 250µA-4V @ 370µA
Gate Charge (Qg) (Max) @ Vgs84 nC @ 10 V110 nC @ 10 V84 nC @ 10 V54 nC @ 6 V

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