In stock: 4448 pcs
| Part Number |
VP0808B-E3
|
STI26NM60N
 |
VP0808B-2
 |
SI8851EDB-T2-E1
 |
|
|---|---|---|---|---|---|
| Manufacturer | Vishay Siliconix | STMicroelectronics | Vishay Siliconix | Vishay Siliconix | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 1.8V, 4.5V | |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA | 4V @ 250µA | 4.5V @ 1mA | 1V @ 250µA | |
| Power Dissipation (Max) | 6.25W (Ta) | 140W (Tc) | 6.25W (Ta) | 660mW (Ta) | |
| Base Product Number | VP0808 | STI26N | VP0808 | SI8851 | |
| Rds On (Max) @ Id, Vgs | 5Ohm @ 1A, 10V | 165mOhm @ 10A, 10V | 5Ohm @ 1A, 10V | 8mOhm @ 7A, 4.5V | |
| Vgs (Max) | ±20V | ±25V | ±20V | ±8V | |
| FET Feature | - | - | - | - | |
| Current - Continuous Drain (Id) @ 25°C | 880mA (Ta) | 20A (Tc) | 880mA (Ta) | 7.7A (Ta) | |
| FET Type | P-Channel | N-Channel | P-Channel | P-Channel | |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF @ 25 V | 1800 pF @ 50 V | 150 pF @ 25 V | 6900 pF @ 10 V | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | |
| Supplier Device Package | TO-39 | I2PAK | TO-39 | Power Micro Foot® (2.4x2) | |
| Package / Case | TO-205AD, TO-39-3 Metal Can | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-205AD, TO-39-3 Metal Can | 30-XFBGA | |
| Series | - | MDmesh™ II | - | TrenchFET® | |
| Package | Tube | Tube | Tube | Tape & Reel (TR) | |
| Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount | |
| Drain to Source Voltage (Vdss) | 80 V | 600 V | 80 V | 20 V |
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