UPA2672T1R-E2-AX

MOSFET 2P-CH 12V 4A 6HUSON

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Specifications
Part Number:UPA2672T1R-E2-AX
Manufacturer:Renesas Electronics America Inc
Description:MOSFET 2P-CH 12V 4A 6HUSON
RoHs Status:
Nkesp Part Number:73D-UPA2672T1R-E2-AX
Part Status4679 pcs
Manufacturer:Renesas Electronics America Inc
Vgs(th) (Max) @ Id:-
Technology:MOSFET (Metal Oxide)
Supplier Device Package:6-HUSON (2x2)
Series:-
Rds On (Max) @ Id, Vgs:67mOhm @ 2A, 4.5V
Power - Max:2.3W
Package / Case:6-WFDFN Exposed Pad
Package:Tape & Reel (TR)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:486pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:5nC @ 4.5V
FET Feature:Logic Level Gate, 1.8V Drive
Drain to Source Voltage (Vdss):12V
Current - Continuous Drain (Id) @ 25°C:4A
Configuration:2 P-Channel (Dual)
Base Product Number:UPA2672
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In stock: 4679 pcs

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Data sheet

Product Comparison

Part Number UPA2672T1R-E2-AX
UPA2672T1R-E2-AX
UPA2670T1R-E2-AX
UPA2670T1R-E2-AX
UPA2660T1R-E2-AX
UPA2660T1R-E2-AX
UPA2650T1E-E2-AT
UPA2650T1E-E2-AT
ManufacturerRenesas Electronics America IncRenesas Electronics America IncRenesas Electronics America IncRenesas Electronics America Inc
Power - Max2.3W2.3W2.3W1.1W
Input Capacitance (Ciss) (Max) @ Vds486pF @ 10V473pF @ 10V330pF @ 10V220pF @ 10V
Vgs(th) (Max) @ Id---2V @ 250µA
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Bulk
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Supplier Device Package6-HUSON (2x2)6-HUSON (2x2)6-HUSON (2x2)6-MLP (3x3)
Configuration2 P-Channel (Dual)2 P-Channel (Dual)2 N-Channel (Dual)2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C4A3A4A3.8A
Series----
Rds On (Max) @ Id, Vgs67mOhm @ 2A, 4.5V79mOhm @ 1.5A, 4.5V62mOhm @ 2A, 4.5V65mOhm @ 3A, 10V
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)-
Base Product NumberUPA2672UPA2670UPA2660UPA2650
FET FeatureLogic Level Gate, 1.8V DriveLogic Level Gate, 1.8V DriveLogic Level Gate, 2.5V DriveLogic Level Gate
Package / Case6-WFDFN Exposed Pad6-WFDFN Exposed Pad6-WFDFN Exposed Pad6-VDFN Exposed Pad
Gate Charge (Qg) (Max) @ Vgs5nC @ 4.5V5.1nC @ 4.5V4.5nC @ 10V2.9nC @ 4.5V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V20V20V20V

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