Specifications: Part Number:TW107N65C,S1F; Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation); Description:G3 650V SIC-MOSFET TO-247 107MO; RoHs Status:; ROHS3 Compliant; Nkesp Part Number:73D-TW107N65C,S1F; Part Status5372 pcs

Vgs(th) (Max) @ Id:5V @ 1.2mA

Vgs (Max):+25V, -10V

Technology:SiCFET (Silicon Carbide)

Supplier Device Package:TO-247

Series:-

Rds On (Max) @ Id, Vgs:145mOhm @ 10A, 18V

Power Dissipation (Max):76W (Tc)

Package / Case:TO-247-3

Package:Tube

Operating Temperature:175°C

Mounting Type:Through Hole

Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 400 V

Gate Charge (Qg) (Max) @ Vgs:21 nC @ 18 V

FET Type:N-Channel

FET Feature:-

Drive Voltage (Max Rds On, Min Rds On):18V

Drain to Source Voltage (Vdss):650 V

Current - Continuous Drain (Id) @ 25°C:20A (Tc)

In stock: 5372 pcs

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Product Comparison

Part Number	TW140N120C,S1F	IPC100N04S5L1R5ATMA1	AOT12N65	IPS70R1K4P7SAKMA1
Manufacturer	Toshiba Semiconductor and Storage	Infineon Technologies	Alpha & Omega Semiconductor Inc.	Infineon Technologies
Package / Case	-	-	-	-
Rds On (Max) @ Id, Vgs	-	-	-	-
Vgs (Max)	-	-	-	-
Series	-	*	*	*
FET Feature	-	-	-	-
Input Capacitance (Ciss) (Max) @ Vds	-	-	-	-
Current - Continuous Drain (Id) @ 25°C	-	-	-	-
Package	-	Bulk	Bulk	Bulk
Technology	-	-	-	-
FET Type	-	-	-	-
Supplier Device Package	-	-	-	-
Gate Charge (Qg) (Max) @ Vgs	-	-	-	-
Drive Voltage (Max Rds On, Min Rds On)	-	-	-	-
Vgs(th) (Max) @ Id	-	-	-	-
Drain to Source Voltage (Vdss)	-	-	-	-
Mounting Type	-	-	-	-
Power Dissipation (Max)	-	-	-	-
Operating Temperature	-	-	-	-