In stock: 38695 pcs
| Part Number |
TW045N120C,S1F
 |
TW027N65C,S1F
 |
FDPF18N50T
 |
SI2333CDS-T1-GE3
 |
|
|---|---|---|---|---|---|
| Manufacturer | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | onsemi | Vishay Siliconix | |
| Vgs(th) (Max) @ Id | 5V @ 6.7mA | 5V @ 3mA | 5V @ 250µA | 1V @ 250µA | |
| Series | - | - | UniFET™ | TrenchFET® | |
| Package | Tube | Tube | Tube | Tape & Reel (TR) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | 18V | 10V | 1.8V, 4.5V | |
| Package / Case | TO-247-3 | TO-247-3 | TO-220-3 Full Pack | TO-236-3, SC-59, SOT-23-3 | |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 18 V | 65 nC @ 18 V | 60 nC @ 10 V | 25 nC @ 4.5 V | |
| FET Feature | - | - | - | - | |
| Power Dissipation (Max) | 182W (Tc) | 156W (Tc) | 38.5W (Tc) | 1.25W (Ta), 2.5W (Tc) | |
| Technology | SiCFET (Silicon Carbide) | SiCFET (Silicon Carbide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 1200 V | 650 V | 500 V | 12 V | |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 20A, 18V | 37mOhm @ 29A, 18V | 265mOhm @ 9A, 10V | 35mOhm @ 5.1A, 4.5V | |
| FET Type | N-Channel | N-Channel | N-Channel | P-Channel | |
| Operating Temperature | 175°C | 175°C | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | |
| Input Capacitance (Ciss) (Max) @ Vds | 1969 pF @ 800 V | 2288 pF @ 400 V | 2860 pF @ 25 V | 1225 pF @ 6 V | |
| Supplier Device Package | TO-247 | TO-247 | TO-220F-3 | SOT-23-3 (TO-236) | |
| Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount | |
| Vgs (Max) | +25V, -10V | +25V, -10V | ±30V | ±8V | |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) | 58A (Tc) | 18A (Tc) | 7.1A (Tc) |
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