TSM60NB900CP

600V, 4A, SINGLE N-CHANNEL POWER

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Specifications
Part Number:TSM60NB900CP
Manufacturer:Taiwan Semiconductor
Description:600V, 4A, SINGLE N-CHANNEL POWER
RoHs Status:
Nkesp Part Number:73D-TSM60NB900CP
Part Status19484 pcs
Manufacturer:Taiwan Semiconductor
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-252, (D-Pak)
Series:-
Rds On (Max) @ Id, Vgs:900mOhm @ 1.2A, 10V
Power Dissipation (Max):36.8W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:9.6 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Base Product Number:TSM60
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In stock: 19484 pcs

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Data sheet

Product Comparison

Part Number TSM60NB900CP
TSM60NB900CP
TSM60NC1R5CH C5G
TSM60NC1R5CH C5G
TSM60NC1R5CP ROG
TSM60NC1R5CP ROG
TSM60NC165CI C0G
TSM60NC165CI C0G
ManufacturerTaiwan Semiconductor CorporationTaiwan Semiconductor CorporationTaiwan Semiconductor CorporationTaiwan Semiconductor Corporation
Rds On (Max) @ Id, Vgs900mOhm @ 1.2A, 10V1.5Ohm @ 1A, 10V1.5Ohm @ 1A, 10V165mOhm @ 11.3A, 10V
Power Dissipation (Max)36.8W (Tc)39W (Tc)55W (Tc)89W (Tc)
Current - Continuous Drain (Id) @ 25°C4A (Tc)3A (Tc)3A (Tc)24A (Tc)
Mounting TypeSurface MountThrough HoleSurface MountThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Supplier Device PackageTO-252, (D-Pak)TO-251 (IPAK)TO-252, (D-Pak)ITO-220
Base Product NumberTSM60TSM60TSM60TSM60
Gate Charge (Qg) (Max) @ Vgs9.6 nC @ 10 V7.6 nC @ 10 V8.1 nC @ 10 V44 nC @ 10 V
FET Feature----
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Drain to Source Voltage (Vdss)600 V600 V600 V600 V
Series----
Vgs (Max)±30V±20V±20V±30V
PackageTape & Reel (TR)TubeTape & Reel (TR)Tube
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-251-3 Short Leads, IPak, TO-251AATO-252-3, DPak (2 Leads + Tab), SC-63TO-220-3 Full Pack, Isolated Tab
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Input Capacitance (Ciss) (Max) @ Vds315 pF @ 100 V242 pF @ 25 V242 pF @ 25 V1857 pF @ 300 V
Vgs(th) (Max) @ Id4V @ 250µA5V @ 1mA5.5V @ 1mA5V @ 1mA
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)

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