TSM60NB900CP ROG

MOSFET N-CHANNEL 600V 4A TO252

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RFQ
Specifications
Part Number:TSM60NB900CP ROG
Manufacturer:Taiwan Semiconductor Corporation
Description:MOSFET N-CHANNEL 600V 4A TO252
RoHs Status:
Nkesp Part Number:73D-TSM60NB900CP ROG
Part Status17273 pcs
Manufacturer:Taiwan Semiconductor Corporation
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-252, (D-Pak)
Series:-
Rds On (Max) @ Id, Vgs:900mOhm @ 1.2A, 10V
Power Dissipation (Max):36.8W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs:9.6 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Base Product Number:TSM60
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In stock: 17273 pcs

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Product Comparison

Part Number TSM60NB900CP ROG
TSM60NB900CP ROG
TSM60NC165CI
TSM60NC165CI
TSM60NC165CI C0G
TSM60NC165CI C0G
TSM60NC196CM2 RNG
TSM60NC196CM2 RNG
ManufacturerTaiwan Semiconductor CorporationTaiwan Semiconductor CorporationTaiwan Semiconductor CorporationTaiwan Semiconductor Corporation
Base Product NumberTSM60TSM60TSM60TSM60
Supplier Device PackageTO-252, (D-Pak)ITO-220ITO-220TO-263AB (D²PAK)
PackageTape & Reel (TR)TubeTubeTape & Reel (TR)
Mounting TypeSurface MountThrough HoleThrough HoleSurface Mount
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V600 V600 V600 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs9.6 nC @ 10 V44 nC @ 10 V44 nC @ 10 V39 nC @ 10 V
Rds On (Max) @ Id, Vgs900mOhm @ 1.2A, 10V165mOhm @ 11.3A, 10V165mOhm @ 11.3A, 10V196mOhm @ 9.5A, 10V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds315 pF @ 100 V1857 pF @ 300 V1857 pF @ 300 V1566 pF @ 300 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)24A (Tc)24A (Tc)28A (Tc)
FET Feature----
Power Dissipation (Max)36.8W (Tc)89W (Tc)89W (Tc)152W (Tc)
Vgs (Max)±30V±30V±30V±20V
Series----
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-220-3 Full Pack, Isolated TabTO-220-3 Full Pack, Isolated TabTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Vgs(th) (Max) @ Id4V @ 250µA5V @ 1mA5V @ 1mA5V @ 1mA

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