TSM085P03CV

-30, -64, SINGLE P-CHANNEL

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Specifications
Part Number:TSM085P03CV
Manufacturer:Taiwan Semiconductor
Description:-30, -64, SINGLE P-CHANNEL
RoHs Status:
Nkesp Part Number:73D-TSM085P03CV
Part Status17750 pcs
Manufacturer:Taiwan Semiconductor
Vgs(th) (Max) @ Id:2.5V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-PDFN (3.1x3.1)
Series:-
Rds On (Max) @ Id, Vgs:8.5mOhm @ 14A, 10V
Power Dissipation (Max):2.4W (Ta), 50W (Tc)
Package / Case:8-PowerWDFN
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:3234 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
FET Type:P-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:14A (Ta), 64A (Tc)
Base Product Number:TSM085
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In stock: 17750 pcs

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Data sheet

Product Comparison

Part Number TSM085P03CV
TSM085P03CV
TSM085N03PQ33
TSM085N03PQ33
TSM085P03CS RLG
TSM085P03CS RLG
TSM100N06CZ C0G
TSM100N06CZ C0G
ManufacturerTaiwan Semiconductor CorporationTaiwan Semiconductor CorporationTaiwan Semiconductor CorporationTaiwan Semiconductor Corporation
Base Product NumberTSM085TSM085TSM085TSM100
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V14.3 nC @ 10 V56 nC @ 10 V92 nC @ 10 V
FET TypeP-ChannelN-ChannelP-ChannelN-Channel
Package / Case8-PowerWDFN8-PowerWDFN8-SOIC (0.154", 3.90mm Width)TO-220-3
Supplier Device Package8-PDFN (3.1x3.1)8-PDFN (3.1x3.1)8-SOPTO-220
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C14A (Ta), 64A (Tc)13A (Ta), 52A (Tc)34A (Tc)100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds3234 pF @ 15 V817 pF @ 15 V3216 pF @ 15 V4382 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V4.5V, 10V4.5V, 10V10V
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tube
Rds On (Max) @ Id, Vgs8.5mOhm @ 14A, 10V8.5mOhm @ 13A, 10V8.5mOhm @ 13A, 10V6.7mOhm @ 30A, 10V
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
FET Feature----
Vgs(th) (Max) @ Id2.5V @ 250µA2.5V @ 250µA2.5V @ 250µA4V @ 250µA
Series----
Drain to Source Voltage (Vdss)30 V30 V30 V60 V
Power Dissipation (Max)2.4W (Ta), 50W (Tc)2.3W (Ta), 37W (Tc)14W (Tc)167W (Tc)
Mounting TypeSurface MountSurface MountSurface MountThrough Hole
Vgs (Max)±20V±20V±20V±20V

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