TPN3300ANH,LQ

MOSFET N-CH 100V 9.4A 8TSON

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RFQ
Specifications
Part Number:TPN3300ANH,LQ
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Description:MOSFET N-CH 100V 9.4A 8TSON
RoHs Status:
Nkesp Part Number:73D-TPN3300ANH,LQ
Part Status39154 pcs
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Vgs(th) (Max) @ Id:4V @ 100µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-TSON Advance (3.3x3.3)
Series:U-MOSVIII-H
Rds On (Max) @ Id, Vgs:33mOhm @ 4.7A, 10V
Power Dissipation (Max):700mW (Ta), 27W (Tc)
Package / Case:8-PowerVDFN
Package:Tape & Reel (TR)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Tc)
Base Product Number:TPN3300

In stock: 39154 pcs

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Product Comparison

Part Number TPN3300ANH,LQ
TPN3300ANH,LQ
TPN4R203NC,L1Q
TPN4R203NC,L1Q
TPN6R003NL,LQ
TPN6R003NL,LQ
TPN2R805PL,L1Q
TPN2R805PL,L1Q
ManufacturerToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and Storage
Package / Case8-PowerVDFN8-PowerVDFN8-PowerVDFN8-PowerVDFN
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V24 nC @ 10 V17 nC @ 10 V39 nC @ 10 V
Vgs(th) (Max) @ Id4V @ 100µA2.3V @ 200µA2.3V @ 200µA2.4V @ 300µA
Current - Continuous Drain (Id) @ 25°C9.4A (Tc)23A (Ta)27A (Tc)139A (Ta), 80A (Tc)
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Base Product NumberTPN3300TPN4R203TPN6R003TPN2R805
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
SeriesU-MOSVIII-HU-MOSVIIIU-MOSVIII-HU-MOSIX-H
Power Dissipation (Max)700mW (Ta), 27W (Tc)700mW (Ta), 22W (Tc)700mW (Ta), 32W (Tc)2.67W (Ta), 104W (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V4.5V, 10V4.5V, 10V4.5V, 10V
Drain to Source Voltage (Vdss)100 V30 V30 V45 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Input Capacitance (Ciss) (Max) @ Vds880 pF @ 50 V1370 pF @ 15 V1400 pF @ 15 V3200 pF @ 22.5 V
FET Feature----
Supplier Device Package8-TSON Advance (3.3x3.3)8-TSON Advance (3.1x3.1)8-TSON Advance (3.1x3.1)8-TSON Advance (3.1x3.1)
Rds On (Max) @ Id, Vgs33mOhm @ 4.7A, 10V4.2mOhm @ 11.5A, 10V6mOhm @ 13.5A, 10V2.8mOhm @ 40A, 10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)175°C
Vgs (Max)±20V±20V±20V±20V

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