TPH3207WS

GANFET N-CH 650V 50A TO247-3

Quantity
RFQ
Specifications
Part Number:TPH3207WS
Manufacturer:Transphorm
Description:GANFET N-CH 650V 50A TO247-3
RoHs Status:
Nkesp Part Number:73D-TPH3207WS
Part Status4550 pcs
Manufacturer:Transphorm
Vgs(th) (Max) @ Id:2.65V @ 700µA
Vgs (Max):±18V
Technology:GaNFET (Gallium Nitride)
Supplier Device Package:TO-247-3
Series:-
Rds On (Max) @ Id, Vgs:41mOhm @ 32A, 8V
Power Dissipation (Max):178W (Tc)
Package / Case:TO-247-3
Package:Tube
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:2197 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 8 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Download Details PDF:

In stock: 4550 pcs

Request Quote
Please click " QUICK RFQ " and provide your contact information,
or email us at [email protected].
We will respond promptly to your inquiry.
Transphorm
Quantity
QUICK RFQ

Data sheet

Product Comparison

Part Number TPH3207WS
TPH3207WS
TPH3300CNH,L1Q
TPH3300CNH,L1Q
TPH3206PS
TPH3206PS
TPH3208LS
TPH3208LS
ManufacturerTransphormToshiba Semiconductor and StorageTransphormTransphorm
Input Capacitance (Ciss) (Max) @ Vds2197 pF @ 400 V1100 pF @ 75 V760 pF @ 480 V760 pF @ 400 V
Current - Continuous Drain (Id) @ 25°C50A (Tc)18A (Ta)17A (Tc)20A (Tc)
Power Dissipation (Max)178W (Tc)1.6W (Ta), 57W (Tc)96W (Tc)96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)650 V150 V600 V650 V
FET Feature----
Vgs(th) (Max) @ Id2.65V @ 700µA4V @ 300µA2.6V @ 500µA2.6V @ 300µA
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Rds On (Max) @ Id, Vgs41mOhm @ 32A, 8V33mOhm @ 9A, 10V180mOhm @ 11A, 8V130mOhm @ 13A, 8V
PackageTubeTape & Reel (TR)TubeTube
Supplier Device PackageTO-247-38-SOP Advance (5x5)TO-220AB3-PQFN (8x8)
Vgs (Max)±18V±20V±18V±18V
TechnologyGaNFET (Gallium Nitride)MOSFET (Metal Oxide)GaNFET (Gallium Nitride)GaNFET (Gallium Nitride)
Gate Charge (Qg) (Max) @ Vgs42 nC @ 8 V10.6 nC @ 10 V9.3 nC @ 4.5 V14 nC @ 8 V
Package / CaseTO-247-38-PowerVDFNTO-220-33-PowerDFN
Mounting TypeThrough HoleSurface MountThrough HoleSurface Mount
Series-U-MOSVIII-H--

Payment Support

The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.

Certifications & Memberships

We strictly controls the quality of products, environment and services.
Through the ISO certification of the third party. View More >

Hot Parts

0 RFQ
Shopping cart (0 Items)
It is empty.
Compare List (0 Items)
It is empty.
Feedback

Your feedback is very important! On this website, we value user experience and strive for continuous improvement.
Please share your feedback with us through our feedback form, and we will respond promptly.
Thank you for choosing us.

Subject
E-mail
Comments
Captcha
Drag or click to upload file
Upload File
types: .xls, .xlsx, .doc, .docx, .jpg, .png and .pdf.
Max file size: 10MB