In stock: 46938 pcs
| Part Number |
TK8R2A06PL,S4X
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TK8P60W5,RVQ
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TK8A60W5,S5VX
|
TK8A50DA(STA4,Q,M)
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|---|---|---|---|---|---|
| Manufacturer | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 25 V | 590 pF @ 300 V | 590 pF @ 300 V | 700 pF @ 25 V | |
| Package | Tube | Tape & Reel (TR) | Tube | Tube | |
| Gate Charge (Qg) (Max) @ Vgs | 28.4 nC @ 10 V | 22 nC @ 10 V | 22 nC @ 10 V | 16 nC @ 10 V | |
| Base Product Number | TK8R2A06 | TK8P60 | TK8A60 | TK8A50 | |
| Drain to Source Voltage (Vdss) | 60 V | 600 V | 600 V | 500 V | |
| Package / Case | TO-220-3 Full Pack | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-3 Full Pack | TO-220-3 Full Pack | |
| Operating Temperature | 175°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 10V | 10V | |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Through Hole | |
| Rds On (Max) @ Id, Vgs | 11.4mOhm @ 8A, 4.5V | 560mOhm @ 4A, 10V | 540mOhm @ 4A, 10V | 1.04Ohm @ 3.8A, 10V | |
| Supplier Device Package | TO-220SIS | DPAK | TO-220SIS | TO-220SIS | |
| Vgs(th) (Max) @ Id | 2.5V @ 300µA | 4.5V @ 400µA | 4.5V @ 400µA | 4.4V @ 1mA | |
| FET Feature | - | - | - | - | |
| Vgs (Max) | ±20V | ±30V | ±30V | ±30V | |
| Power Dissipation (Max) | 36W (Tc) | 80W (Tc) | 30W (Tc) | 35W (Tc) | |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | 8A (Ta) | 8A (Ta) | 7.5A (Ta) | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Series | U-MOSIX-H | DTMOSIV | DTMOSIV | π-MOSVII |
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