TK8R2A06PL,S4X

MOSFET N-CH 60V 50A TO220SIS

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Specifications
Part Number:TK8R2A06PL,S4X
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Description:MOSFET N-CH 60V 50A TO220SIS
RoHs Status:
Nkesp Part Number:73D-TK8R2A06PL,S4X
Part Status46938 pcs
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Vgs(th) (Max) @ Id:2.5V @ 300µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220SIS
Series:U-MOSIX-H
Rds On (Max) @ Id, Vgs:11.4mOhm @ 8A, 4.5V
Power Dissipation (Max):36W (Tc)
Package / Case:TO-220-3 Full Pack
Package:Tube
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:28.4 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Base Product Number:TK8R2A06

In stock: 46938 pcs

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Product Comparison

Part Number TK8R2A06PL,S4X
TK8R2A06PL,S4X
TK8P60W5,RVQ
TK8P60W5,RVQ
TK8A60W5,S5VX
TK8A60W5,S5VX
TK8A50DA(STA4,Q,M)
TK8A50DA(STA4,Q,M)
ManufacturerToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and Storage
Input Capacitance (Ciss) (Max) @ Vds1990 pF @ 25 V590 pF @ 300 V590 pF @ 300 V700 pF @ 25 V
PackageTubeTape & Reel (TR)TubeTube
Gate Charge (Qg) (Max) @ Vgs28.4 nC @ 10 V22 nC @ 10 V22 nC @ 10 V16 nC @ 10 V
Base Product NumberTK8R2A06TK8P60TK8A60TK8A50
Drain to Source Voltage (Vdss)60 V600 V600 V500 V
Package / CaseTO-220-3 Full PackTO-252-3, DPak (2 Leads + Tab), SC-63TO-220-3 Full PackTO-220-3 Full Pack
Operating Temperature175°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V10V10V10V
Mounting TypeThrough HoleSurface MountThrough HoleThrough Hole
Rds On (Max) @ Id, Vgs11.4mOhm @ 8A, 4.5V560mOhm @ 4A, 10V540mOhm @ 4A, 10V1.04Ohm @ 3.8A, 10V
Supplier Device PackageTO-220SISDPAKTO-220SISTO-220SIS
Vgs(th) (Max) @ Id2.5V @ 300µA4.5V @ 400µA4.5V @ 400µA4.4V @ 1mA
FET Feature----
Vgs (Max)±20V±30V±30V±30V
Power Dissipation (Max)36W (Tc)80W (Tc)30W (Tc)35W (Tc)
Current - Continuous Drain (Id) @ 25°C50A (Tc)8A (Ta)8A (Ta)7.5A (Ta)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
SeriesU-MOSIX-HDTMOSIVDTMOSIVπ-MOSVII

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