In stock: 20976 pcs
| Part Number |
TK65E10N1,S1X
 |
TK6A60W,S4VX
 |
TK6A53D(STA4,Q,M)
|
TK60P03M1,RQ(S
|
|
|---|---|---|---|---|---|
| Manufacturer | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | |
| Package | Tube | Tube | Tube | Tape & Reel (TR) | |
| Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount | |
| Drain to Source Voltage (Vdss) | 100 V | 600 V | 525 V | 30 V | |
| Vgs (Max) | ±20V | ±30V | ±30V | ±20V | |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V | 12 nC @ 10 V | 12 nC @ 10 V | 40 nC @ 10 V | |
| Base Product Number | TK65E10 | TK6A60 | TK6A53 | TK60P03 | |
| Package / Case | TO-220-3 | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Series | U-MOSVIII-H | DTMOSIV | π-MOSVII | U-MOSVI-H | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 4.5V, 10V | |
| Supplier Device Package | TO-220 | TO-220SIS | TO-220SIS | DPAK | |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 50 V | 390 pF @ 300 V | 600 pF @ 25 V | 2700 pF @ 10 V | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| FET Feature | - | - | - | - | |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 32.5A, 10V | 750mOhm @ 3.1A, 10V | 1.3Ohm @ 3A, 10V | 6.4mOhm @ 30A, 10V | |
| Operating Temperature | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | 3.7V @ 310µA | 4.4V @ 1mA | 2.3V @ 500µA | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Current - Continuous Drain (Id) @ 25°C | 148A (Ta) | 6.2A (Ta) | 6A (Ta) | 60A (Ta) | |
| Power Dissipation (Max) | 192W (Tc) | 30W (Tc) | 35W (Tc) | 63W (Tc) |
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