TK5A80E,S4X

PB-F POWER MOSFET TRANSISTOR TO-

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Specifications
Part Number:TK5A80E,S4X
Manufacturer:Toshiba Semiconductor and Storage
Description:PB-F POWER MOSFET TRANSISTOR TO-
RoHs Status:
Nkesp Part Number:73D-TK5A80E,S4X
Part Status29556 pcs
Manufacturer:Toshiba Semiconductor and Storage
Vgs(th) (Max) @ Id:4V @ 500µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220SIS
Series:-
Rds On (Max) @ Id, Vgs:2.4Ohm @ 2.5A, 10V
Power Dissipation (Max):40W (Tc)
Package / Case:TO-220-3 Full Pack
Package:Tube
Operating Temperature:150°C
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)

In stock: 29556 pcs

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Product Comparison

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TK5A80E,S4X
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ManufacturerToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and Storage
Operating Temperature150°C150°C (TJ)150°C (TJ)150°C
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET Feature----
Drain to Source Voltage (Vdss)800 V450 V500 V600 V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Power Dissipation (Max)40W (Tc)30W (Tc)35W (Tc)60W (Tc)
Current - Continuous Drain (Id) @ 25°C5A (Ta)4.5A (Ta)5A (Ta)4.5A (Ta)
Vgs(th) (Max) @ Id4V @ 500µA4.4V @ 1mA4.4V @ 1mA4.5V @ 230µA
Vgs (Max)±30V±30V±30V±30V
Mounting TypeThrough HoleThrough HoleThrough HoleSurface Mount
Series-π-MOSVIIπ-MOSVIIDTMOSIV
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V9 nC @ 10 V11 nC @ 10 V11.5 nC @ 10 V
Supplier Device PackageTO-220SISTO-220SISTO-220SISDPAK
Package / CaseTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full PackTO-252-3, DPak (2 Leads + Tab), SC-63
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
PackageTubeTubeTubeTape & Reel (TR)
Rds On (Max) @ Id, Vgs2.4Ohm @ 2.5A, 10V1.75Ohm @ 2.3A, 10V1.5Ohm @ 2.5A, 10V990mOhm @ 2.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds950 pF @ 25 V380 pF @ 25 V490 pF @ 25 V370 pF @ 300 V

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