In stock: 29556 pcs
| Part Number |
TK5A80E,S4X
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TK5A45DA(STA4,Q,M)
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TK5A50D(STA4,Q,M)
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TK5P60W5,RVQ
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|---|---|---|---|---|---|
| Manufacturer | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | |
| Operating Temperature | 150°C | 150°C (TJ) | 150°C (TJ) | 150°C | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| FET Feature | - | - | - | - | |
| Drain to Source Voltage (Vdss) | 800 V | 450 V | 500 V | 600 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | |
| Power Dissipation (Max) | 40W (Tc) | 30W (Tc) | 35W (Tc) | 60W (Tc) | |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) | 4.5A (Ta) | 5A (Ta) | 4.5A (Ta) | |
| Vgs(th) (Max) @ Id | 4V @ 500µA | 4.4V @ 1mA | 4.4V @ 1mA | 4.5V @ 230µA | |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V | |
| Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount | |
| Series | - | π-MOSVII | π-MOSVII | DTMOSIV | |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | 9 nC @ 10 V | 11 nC @ 10 V | 11.5 nC @ 10 V | |
| Supplier Device Package | TO-220SIS | TO-220SIS | TO-220SIS | DPAK | |
| Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Package | Tube | Tube | Tube | Tape & Reel (TR) | |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 2.5A, 10V | 1.75Ohm @ 2.3A, 10V | 1.5Ohm @ 2.5A, 10V | 990mOhm @ 2.3A, 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 25 V | 380 pF @ 25 V | 490 pF @ 25 V | 370 pF @ 300 V |
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