In stock: 16449 pcs
| Part Number |
TK33S10N1L,LQ
|
TK35A08N1,S4X
 |
TK31N60W5,S1VF
|
TK31N60X,S1F
|
|
|---|---|---|---|---|---|
| Manufacturer | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 10 V | 1700 pF @ 40 V | 3000 pF @ 300 V | 3000 pF @ 300 V | |
| Supplier Device Package | DPAK+ | TO-220SIS | TO-247 | TO-247 | |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V | 25 nC @ 10 V | 105 nC @ 10 V | 65 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 100 V | 80 V | 600 V | 600 V | |
| FET Feature | - | - | - | - | |
| Vgs(th) (Max) @ Id | 2.5V @ 500µA | 4V @ 300µA | 4.5V @ 1.5mA | 3.5V @ 1.5mA | |
| Package | Tape & Reel (TR) | Tube | Tube | Tube | |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 16.5A, 10V | 12.2mOhm @ 17.5A, 10V | 99mOhm @ 15.4A, 10V | 88mOhm @ 9.4A, 10V | |
| Base Product Number | TK33S10 | TK35A08 | TK31N60 | TK31N60 | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Series | U-MOSVIII-H | U-MOSVIII-H | DTMOSIV | DTMOSIV-H | |
| Vgs (Max) | ±20V | ±20V | ±30V | ±30V | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-3 Full Pack | TO-247-3 | TO-247-3 | |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta) | 35A (Tc) | 30.8A (Ta) | 30.8A (Ta) | |
| Operating Temperature | 175°C | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 10V | 10V | |
| Power Dissipation (Max) | 125W (Tc) | 30W (Tc) | 230W (Tc) | 230W (Tc) | |
| Mounting Type | Surface Mount | Through Hole | Through Hole | Through Hole |
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