In stock: 3585 pcs
| Part Number |
TK2P60D(TE16L1,NQ)
|
TK2R9E10PL,S1X
 |
TK28V65W5,LQ
|
TK2Q60D(Q)
|
|
|---|---|---|---|---|---|
| Manufacturer | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | |
| Drain to Source Voltage (Vdss) | 600 V | 100 V | 650 V | 600 V | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-3 | 4-VSFN Exposed Pad | TO-251-3 Stub Leads, IPak | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 10V | 10V | |
| Power Dissipation (Max) | 60W (Tc) | 306W (Tc) | 240W (Tc) | 60W (Tc) | |
| Operating Temperature | 150°C (TJ) | 175°C | 150°C | 150°C (TJ) | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Series | π-MOSVII | U-MOSIX-H | - | π-MOSVII | |
| Supplier Device Package | PW-MOLD | TO-220 | 4-DFN-EP (8x8) | PW-MOLD2 | |
| Rds On (Max) @ Id, Vgs | 4.3Ohm @ 1A, 10V | 2.9mOhm @ 50A, 10V | 140mOhm @ 13.8A, 10V | 4.3Ohm @ 1A, 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V | 161 nC @ 10 V | 90 nC @ 10 V | 7 nC @ 10 V | |
| Base Product Number | TK2P60 | - | TK28V65 | TK2Q60 | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| FET Feature | - | - | - | - | |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) | 100A (Ta) | 27.6A (Ta) | 2A (Ta) | |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 25 V | 9500 pF @ 50 V | 3000 pF @ 300 V | 280 pF @ 25 V | |
| Mounting Type | Surface Mount | Through Hole | Surface Mount | Through Hole | |
| Vgs(th) (Max) @ Id | 4.4V @ 1mA | 2.5V @ 1mA | 4.5V @ 1.6mA | 4.4V @ 1mA | |
| Package | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Bulk | |
| Vgs (Max) | ±30V | ±20V | ±30V | ±30V |
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