TK290A60Y,S4X

MOSFET N-CH 600V 11.5A TO220SIS

Quantity
RFQ
Specifications
Part Number:TK290A60Y,S4X
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Description:MOSFET N-CH 600V 11.5A TO220SIS
RoHs Status:
Nkesp Part Number:73D-TK290A60Y,S4X
Part Status20023 pcs
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Vgs(th) (Max) @ Id:4V @ 450µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220SIS
Series:DTMOSV
Rds On (Max) @ Id, Vgs:290mOhm @ 5.8A, 10V
Power Dissipation (Max):35W (Tc)
Package / Case:TO-220-3 Full Pack
Package:Tube
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:730 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11.5A (Tc)
Base Product Number:TK290A60

In stock: 20023 pcs

Request Quote
Please click " QUICK RFQ " and provide your contact information,
or email us at [email protected].
We will respond promptly to your inquiry.
Toshiba Semiconductor and Storage
Quantity
QUICK RFQ

Product Comparison

Part Number TK290A60Y,S4X
TK290A60Y,S4X
TK2K2A60F,S4X
TK2K2A60F,S4X
TK25S06N1L,LQ
TK25S06N1L,LQ
TK28V65W,LQ
TK28V65W,LQ
ManufacturerToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C11.5A (Tc)3.5A (Ta)25A (Ta)27.6A (Ta)
Package / CaseTO-220-3 Full PackTO-220-3 Full PackTO-252-3, DPak (2 Leads + Tab), SC-634-VSFN Exposed Pad
Mounting TypeThrough HoleThrough HoleSurface MountSurface Mount
Base Product NumberTK290A60TK2K2A60TK25S06TK28V65
Power Dissipation (Max)35W (Tc)30W (Tc)57W (Tc)240W (Tc)
Operating Temperature150°C (TJ)150°C175°C150°C
Drive Voltage (Max Rds On, Min Rds On)10V10V4.5V, 10V10V
Vgs (Max)±30V±30V±20V±30V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V13 nC @ 10 V15 nC @ 10 V75 nC @ 10 V
Vgs(th) (Max) @ Id4V @ 450µA4V @ 350µA2.5V @ 100µA3.5V @ 1.6mA
Input Capacitance (Ciss) (Max) @ Vds730 pF @ 300 V450 pF @ 300 V855 pF @ 10 V3000 pF @ 300 V
SeriesDTMOSV-U-MOSVIII-H-
PackageTubeTubeTape & Reel (TR)Tape & Reel (TR)
FET Feature----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V600 V60 V650 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Rds On (Max) @ Id, Vgs290mOhm @ 5.8A, 10V2.2Ohm @ 1.8A, 10V18.5mOhm @ 12.5A, 10V120mOhm @ 13.8A, 10V
Supplier Device PackageTO-220SISTO-220SISDPAK+4-DFN-EP (8x8)

Payment Support

The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.

Certifications & Memberships

We strictly controls the quality of products, environment and services.
Through the ISO certification of the third party. View More >

Hot Parts

0 RFQ
Shopping cart (0 Items)
It is empty.
Compare List (0 Items)
It is empty.
Feedback

Your feedback is very important! On this website, we value user experience and strive for continuous improvement.
Please share your feedback with us through our feedback form, and we will respond promptly.
Thank you for choosing us.

Subject
E-mail
Comments
Captcha
Drag or click to upload file
Upload File
types: .xls, .xlsx, .doc, .docx, .jpg, .png and .pdf.
Max file size: 10MB