In stock: 32875 pcs
| Part Number |
TK25S06N1L,LQ
|
TK25E60X5,S1X
 |
TK25A60X,S5X
|
TK28V65W,LQ
|
|
|---|---|---|---|---|---|
| Manufacturer | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | |
| Drain to Source Voltage (Vdss) | 60 V | 600 V | 600 V | 650 V | |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V | 60 nC @ 10 V | 40 nC @ 10 V | 75 nC @ 10 V | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Supplier Device Package | DPAK+ | TO-220 | TO-220SIS | 4-DFN-EP (8x8) | |
| Series | U-MOSVIII-H | DTMOSIV-H | DTMOSIV-H | - | |
| FET Feature | - | - | - | - | |
| Base Product Number | TK25S06 | TK25E60 | TK25A60 | TK28V65 | |
| Input Capacitance (Ciss) (Max) @ Vds | 855 pF @ 10 V | 2400 pF @ 300 V | 2400 pF @ 300 V | 3000 pF @ 300 V | |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) | 25A (Ta) | 25A (Ta) | 27.6A (Ta) | |
| Vgs (Max) | ±20V | ±30V | ±30V | ±30V | |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA | 4.5V @ 1.2mA | 3.5V @ 1.2mA | 3.5V @ 1.6mA | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Operating Temperature | 175°C | 150°C (TJ) | 150°C (TJ) | 150°C | |
| Power Dissipation (Max) | 57W (Tc) | 180W (Tc) | 45W (Tc) | 240W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-3 | TO-220-3 Full Pack | 4-VSFN Exposed Pad | |
| Package | Tape & Reel (TR) | Tube | Tube | Tape & Reel (TR) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 10V | 10V | |
| Rds On (Max) @ Id, Vgs | 18.5mOhm @ 12.5A, 10V | 140mOhm @ 7.5A, 10V | 125mOhm @ 7.5A, 10V | 120mOhm @ 13.8A, 10V | |
| Mounting Type | Surface Mount | Through Hole | Through Hole | Surface Mount |
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