TK1P90A,LQ(CO

MOSFET N-CH 900V 1A PW-MOLD

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Specifications
Part Number:TK1P90A,LQ(CO
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Description:MOSFET N-CH 900V 1A PW-MOLD
RoHs Status:
Nkesp Part Number:73D-TK1P90A,LQ(CO
Part Status4415 pcs
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Vgs(th) (Max) @ Id:4V @ 1mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:PW-MOLD
Series:-
Rds On (Max) @ Id, Vgs:9Ohm @ 500mA, 10V
Power Dissipation (Max):20W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:150°C
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:320 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:1A (Ta)
Base Product Number:TK1P90

In stock: 4415 pcs

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Toshiba Semiconductor and Storage
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Product Comparison

Part Number TK1P90A,LQ(CO
TK1P90A,LQ(CO
TK190E65Z,S1X
TK190E65Z,S1X
TK1R4S04PB,LXHQ
TK1R4S04PB,LXHQ
TK17V65W,LQ
TK17V65W,LQ
ManufacturerToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and Storage
Drive Voltage (Max Rds On, Min Rds On)10V10V6V, 10V10V
Base Product NumberTK1P90-TK1R4S04TK17V65
Rds On (Max) @ Id, Vgs9Ohm @ 500mA, 10V190mOhm @ 7.5A, 10V1.9mOhm @ 60A, 6V210mOhm @ 8.7A, 10V
Mounting TypeSurface MountThrough HoleSurface MountSurface Mount
Series--U-MOSIX-H-
Current - Continuous Drain (Id) @ 25°C1A (Ta)15A (Ta)120A (Ta)17.3A (Ta)
Supplier Device PackagePW-MOLDTO-220DPAK+4-DFN-EP (8x8)
Operating Temperature150°C150°C175°C150°C
PackageTape & Reel (TR)TubeTape & Reel (TR)Tape & Reel (TR)
Drain to Source Voltage (Vdss)900 V650 V40 V650 V
Vgs(th) (Max) @ Id4V @ 1mA4V @ 610µA3V @ 500µA3.5V @ 900µA
Power Dissipation (Max)20W (Tc)130W (Tc)180W (Tc)156W (Tc)
Vgs (Max)±30V±30V±20V±30V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs13 nC @ 10 V25 nC @ 10 V103 nC @ 10 V45 nC @ 10 V
FET Feature----
Input Capacitance (Ciss) (Max) @ Vds320 pF @ 25 V1370 pF @ 300 V5500 pF @ 10 V1800 pF @ 300 V
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63TO-220-3TO-252-3, DPak (2 Leads + Tab), SC-634-VSFN Exposed Pad

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