In stock: 4415 pcs
Part Number |
TK1P90A,LQ(CO
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TK190E65Z,S1X
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TK1R4S04PB,LXHQ
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TK17V65W,LQ
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Manufacturer | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 6V, 10V | 10V | |
Base Product Number | TK1P90 | - | TK1R4S04 | TK17V65 | |
Rds On (Max) @ Id, Vgs | 9Ohm @ 500mA, 10V | 190mOhm @ 7.5A, 10V | 1.9mOhm @ 60A, 6V | 210mOhm @ 8.7A, 10V | |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount | |
Series | - | - | U-MOSIX-H | - | |
Current - Continuous Drain (Id) @ 25°C | 1A (Ta) | 15A (Ta) | 120A (Ta) | 17.3A (Ta) | |
Supplier Device Package | PW-MOLD | TO-220 | DPAK+ | 4-DFN-EP (8x8) | |
Operating Temperature | 150°C | 150°C | 175°C | 150°C | |
Package | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tape & Reel (TR) | |
Drain to Source Voltage (Vdss) | 900 V | 650 V | 40 V | 650 V | |
Vgs(th) (Max) @ Id | 4V @ 1mA | 4V @ 610µA | 3V @ 500µA | 3.5V @ 900µA | |
Power Dissipation (Max) | 20W (Tc) | 130W (Tc) | 180W (Tc) | 156W (Tc) | |
Vgs (Max) | ±30V | ±30V | ±20V | ±30V | |
FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V | 25 nC @ 10 V | 103 nC @ 10 V | 45 nC @ 10 V | |
FET Feature | - | - | - | - | |
Input Capacitance (Ciss) (Max) @ Vds | 320 pF @ 25 V | 1370 pF @ 300 V | 5500 pF @ 10 V | 1800 pF @ 300 V | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 4-VSFN Exposed Pad |
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