TK17A65W5,S5X

X35 PB-F POWER MOSFET TRANSISTOR

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Specifications
Part Number:TK17A65W5,S5X
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Description:X35 PB-F POWER MOSFET TRANSISTOR
RoHs Status:
Nkesp Part Number:73D-TK17A65W5,S5X
Part Status17499 pcs
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Vgs(th) (Max) @ Id:4.5V @ 900µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220SIS
Series:-
Rds On (Max) @ Id, Vgs:230mOhm @ 8.7A, 10V
Power Dissipation (Max):45W (Tc)
Package / Case:TO-220-3 Full Pack
Package:Tube
Operating Temperature:150°C
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:17.3A (Ta)
Base Product Number:TK17A65

In stock: 17499 pcs

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Toshiba Semiconductor and Storage
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Product Comparison

Part Number TK17A65W5,S5X
TK17A65W5,S5X
TK16J60W5,S1VQ
TK16J60W5,S1VQ
TK16N60W,S1VF
TK16N60W,S1VF
TK16J60W,S1VQ
TK16J60W,S1VQ
ManufacturerToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and Storage
Base Product NumberTK17A65TK16J60TK16N60TK16J60
Current - Continuous Drain (Id) @ 25°C17.3A (Ta)15.8A (Ta)15.8A (Ta)15.8A (Ta)
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V43 nC @ 10 V38 nC @ 10 V38 nC @ 10 V
Drain to Source Voltage (Vdss)650 V600 V600 V600 V
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
Operating Temperature150°C150°C150°C (TJ)150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 300 V1350 pF @ 300 V1350 pF @ 300 V1350 pF @ 300 V
Package / CaseTO-220-3 Full PackTO-3P-3, SC-65-3TO-247-3TO-3P-3, SC-65-3
Rds On (Max) @ Id, Vgs230mOhm @ 8.7A, 10V230mOhm @ 7.9A, 10V190mOhm @ 7.9A, 10V190mOhm @ 7.9A, 10V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
FET Feature----
Series--DTMOSIVDTMOSIV
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Power Dissipation (Max)45W (Tc)130W (Tc)130W (Tc)130W (Tc)
Supplier Device PackageTO-220SISTO-3P(N)TO-247TO-3P(N)
Vgs(th) (Max) @ Id4.5V @ 900µA4.5V @ 790µA3.7V @ 790µA3.7V @ 790µA
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
PackageTubeTubeTubeTube
Vgs (Max)±30V±30V±30V±30V

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