TK12A45D(STA4,Q,M)

MOSFET N-CH 450V 12A TO220SIS

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Specifications
Part Number:TK12A45D(STA4,Q,M)
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Description:MOSFET N-CH 450V 12A TO220SIS
RoHs Status:
Nkesp Part Number:73D-TK12A45D(STA4,Q,M)
Part Status16886 pcs
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Vgs(th) (Max) @ Id:4V @ 1mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220SIS
Series:π-MOSVII
Rds On (Max) @ Id, Vgs:520mOhm @ 6A, 10V
Power Dissipation (Max):45W (Tc)
Package / Case:TO-220-3 Full Pack
Package:Tube
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):450 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta)
Base Product Number:TK12A45
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In stock: 16886 pcs

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Data sheet

Product Comparison

Part Number TK12A45D(STA4,Q,M)
TK12A45D(STA4,Q,M)
TK12A50W,S5X
TK12A50W,S5X
TK12A60D(STA4,Q,M)
TK12A60D(STA4,Q,M)
TK11A60D(STA4,Q,M)
TK11A60D(STA4,Q,M)
ManufacturerToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and Storage
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V25 nC @ 10 V38 nC @ 10 V28 nC @ 10 V
FET Feature----
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V890 pF @ 300 V1800 pF @ 25 V1550 pF @ 25 V
Base Product NumberTK12A45-TK12A60TK11A60
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Package / CaseTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full Pack
Vgs (Max)±30V±30V±30V±30V
Power Dissipation (Max)45W (Tc)35W (Tc)45W (Tc)45W (Tc)
Seriesπ-MOSVIIDTMOSIVπ-MOSVIIπ-MOSVII
PackageTubeTubeTubeTube
Current - Continuous Drain (Id) @ 25°C12A (Ta)11.5A (Ta)12A (Ta)11A (Ta)
Drain to Source Voltage (Vdss)450 V500 V600 V600 V
Operating Temperature150°C (TJ)150°C150°C (TJ)150°C (TJ)
Supplier Device PackageTO-220SISTO-220SISTO-220SISTO-220SIS
Vgs(th) (Max) @ Id4V @ 1mA3.7V @ 600µA4V @ 1mA4V @ 1mA
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Rds On (Max) @ Id, Vgs520mOhm @ 6A, 10V300mOhm @ 5.8A, 10V550mOhm @ 6A, 10V650mOhm @ 5.5A, 10V

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