TK11A65W,S5X

MOSFET N-CH 650V 11.1A TO220SIS

Quantity
RFQ
Specifications
Part Number:TK11A65W,S5X
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Description:MOSFET N-CH 650V 11.1A TO220SIS
RoHs Status:
Nkesp Part Number:73D-TK11A65W,S5X
Part Status27125 pcs
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Vgs(th) (Max) @ Id:3.5V @ 450µA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-220SIS
Series:DTMOSIV
Rds On (Max) @ Id, Vgs:390mOhm @ 5.5A, 10V
Power Dissipation (Max):35W (Tc)
Package / Case:TO-220-3 Full Pack
Package:Tube
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:890 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11.1A (Ta)
Base Product Number:TK11A65

In stock: 27125 pcs

Request Quote
Please click " QUICK RFQ " and provide your contact information,
or email us at [email protected].
We will respond promptly to your inquiry.
Toshiba Semiconductor and Storage
Quantity
QUICK RFQ

Product Comparison

Part Number TK11A65W,S5X
TK11A65W,S5X
TK12A53D(STA4,Q,M)
TK12A53D(STA4,Q,M)
TK11A60D(STA4,Q,M)
TK11A60D(STA4,Q,M)
TK11A55D(STA4,Q,M)
TK11A55D(STA4,Q,M)
ManufacturerToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and Storage
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
FET Feature----
Base Product NumberTK11A65TK12A53TK11A60TK11A55
Operating Temperature150°C (TJ)150°C (TJ)150°C (TJ)150°C (TJ)
PackageTubeTubeTubeTube
Supplier Device PackageTO-220SISTO-220SISTO-220SISTO-220SIS
Current - Continuous Drain (Id) @ 25°C11.1A (Ta)12A (Ta)11A (Ta)11A (Ta)
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Vgs (Max)±30V±30V±30V±30V
Drain to Source Voltage (Vdss)650 V525 V600 V550 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
SeriesDTMOSIVπ-MOSVIIπ-MOSVIIπ-MOSVII
Power Dissipation (Max)35W (Tc)45W (Tc)45W (Tc)45W (Tc)
Package / CaseTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full PackTO-220-3 Full Pack
Rds On (Max) @ Id, Vgs390mOhm @ 5.5A, 10V580mOhm @ 6A, 10V650mOhm @ 5.5A, 10V630mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id3.5V @ 450µA4V @ 1mA4V @ 1mA4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds890 pF @ 300 V1350 pF @ 25 V1550 pF @ 25 V1350 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V25 nC @ 10 V28 nC @ 10 V25 nC @ 10 V

Payment Support

The payment method can be chosen from the methods shown below: Wire Transfer (T/T, Bank Transfer), Western Union, Credit card, PayPal.

Certifications & Memberships

We strictly controls the quality of products, environment and services.
Through the ISO certification of the third party. View More >

Hot Parts

0 RFQ
Shopping cart (0 Items)
It is empty.
Compare List (0 Items)
It is empty.
Feedback

Your feedback is very important! On this website, we value user experience and strive for continuous improvement.
Please share your feedback with us through our feedback form, and we will respond promptly.
Thank you for choosing us.

Subject
E-mail
Comments
Captcha
Drag or click to upload file
Upload File
types: .xls, .xlsx, .doc, .docx, .jpg, .png and .pdf.
Max file size: 10MB