In stock: 25608 pcs
| Part Number |
TK11A55D(STA4,Q,M)
 |
TK125V65Z,LQ
 |
TK12A50E,S4X
 |
TK110E10PL,S1X
|
|
|---|---|---|---|---|---|
| Manufacturer | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | |
| Series | π-MOSVII | DTMOSVI | - | - | |
| Package / Case | TO-220-3 Full Pack | 4-VSFN Exposed Pad | TO-220-3 Full Pack | TO-220-3 | |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Through Hole | |
| Rds On (Max) @ Id, Vgs | 630mOhm @ 5.5A, 10V | 125mOhm @ 12A, 10V | 520 mOhm @ 6A, 10V | 10.7mOhm @ 21A, 10V | |
| Vgs (Max) | ±30V | ±30V | ±30V | ±20V | |
| FET Feature | - | - | - | - | |
| Drain to Source Voltage (Vdss) | 550 V | 650 V | 500V | 100 V | |
| Base Product Number | TK11A55 | TK125V65 | - | TK110E10 | |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V | 2250 pF @ 300 V | 1300pF @ 25V | 2040 pF @ 50 V | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 4.5V, 10V | |
| Power Dissipation (Max) | 45W (Tc) | 190W (Tc) | 45W (Tc) | 87W (Tc) | |
| Supplier Device Package | TO-220SIS | 4-DFN-EP (8x8) | TO-220SIS | TO-220 | |
| Operating Temperature | 150°C (TJ) | 150°C | 150°C (TJ) | 175°C | |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V | 40 nC @ 10 V | 40nC @ 10V | 33 nC @ 10 V | |
| Package | Tube | Tape & Reel (TR) | - | Tube | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) | 24A (Ta) | 12A (Ta) | 42A (Tc) | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | 4V @ 1.02mA | 4V @ 1.2mA | 2.5V @ 300µA |
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