TK110U65Z,RQ

DTMOS VI TOLL PD=190W F=1MHZ

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RFQ
Specifications
Part Number:TK110U65Z,RQ
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Description:DTMOS VI TOLL PD=190W F=1MHZ
RoHs Status:
Nkesp Part Number:73D-TK110U65Z,RQ
Part Status11874 pcs
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Vgs(th) (Max) @ Id:4V @ 1.02mA
Vgs (Max):±30V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TOLL
Series:DTMOSVI
Rds On (Max) @ Id, Vgs:110mOhm @ 12A, 10V
Power Dissipation (Max):190W (Tc)
Package / Case:8-PowerSFN
Package:Tape & Reel (TR)
Operating Temperature:150°C
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2250 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:24A (Ta)

In stock: 11874 pcs

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Toshiba Semiconductor and Storage
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Product Comparison

Part Number TK110U65Z,RQ
TK110U65Z,RQ
TK110A10PL,S4X
TK110A10PL,S4X
TK10Q60W,S1VQ
TK10Q60W,S1VQ
TK125V65Z,LQ
TK125V65Z,LQ
ManufacturerToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and Storage
Drain to Source Voltage (Vdss)650 V100 V600 V650 V
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V33 nC @ 10 V20 nC @ 10 V40 nC @ 10 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
PackageTape & Reel (TR)TubeTubeTape & Reel (TR)
Package / Case8-PowerSFNTO-220-3 Full PackTO-251-3 Stub Leads, IPak4-VSFN Exposed Pad
Vgs (Max)±30V±20V±30V±30V
Current - Continuous Drain (Id) @ 25°C24A (Ta)36A (Tc)9.7A (Ta)24A (Ta)
SeriesDTMOSVI-DTMOSIVDTMOSVI
Input Capacitance (Ciss) (Max) @ Vds2250 pF @ 300 V2040 pF @ 50 V700 pF @ 300 V2250 pF @ 300 V
Mounting TypeSurface MountThrough HoleThrough HoleSurface Mount
Supplier Device PackageTOLLTO-220SISI-Pak4-DFN-EP (8x8)
Rds On (Max) @ Id, Vgs110mOhm @ 12A, 10V10.8mOhm @ 18A, 10V430mOhm @ 4.9A, 10V125mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On)10V4.5V, 10V10V10V
Power Dissipation (Max)190W (Tc)36W (Tc)80W (Tc)190W (Tc)
FET Feature----
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Operating Temperature150°C175°C150°C (TJ)150°C
Vgs(th) (Max) @ Id4V @ 1.02mA2.5V @ 300µA3.7V @ 500µA4V @ 1.02mA

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