TK110P10PL,RQ

X35 PB-F POWER MOSFET TRANSISTOR

Quantity
RFQ
Specifications
Part Number:TK110P10PL,RQ
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Description:X35 PB-F POWER MOSFET TRANSISTOR
RoHs Status:
ROHS3 Compliant
Nkesp Part Number:73D-TK110P10PL,RQ
Part Status39128 pcs
Manufacturer:TAEC Product (Toshiba Electronic Devices and Storage Corporation)
Vgs(th) (Max) @ Id:2.5V @ 300µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:DPAK
Series:-
Rds On (Max) @ Id, Vgs:10.6mOhm @ 20A, 10V
Power Dissipation (Max):75W (Tc)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Package:Tape & Reel (TR)
Operating Temperature:175°C
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:2040 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Base Product Number:TK110P10

In stock: 39128 pcs

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ManufacturerToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and StorageToshiba Semiconductor and Storage
Technology----
Series-***
Supplier Device Package----
Package / Case----
FET Feature----
Current - Continuous Drain (Id) @ 25°C----
Drive Voltage (Max Rds On, Min Rds On)----
Input Capacitance (Ciss) (Max) @ Vds----
Drain to Source Voltage (Vdss)----
Mounting Type----
Vgs(th) (Max) @ Id----
Vgs (Max)----
Power Dissipation (Max)----
Package-BulkBulkBulk
Rds On (Max) @ Id, Vgs----
Gate Charge (Qg) (Max) @ Vgs----
Base Product Number----
FET Type----
Operating Temperature----

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