In stock: 39128 pcs
| Part Number |
TK110P10PL,RQ
 |
TK11A55D(STA4,Q,M)
 |
TK10P60W,RVQ
|
TK110E65Z,S1X
|
|
|---|---|---|---|---|---|
| Manufacturer | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| Series | - | π-MOSVII | DTMOSIV | - | |
| Supplier Device Package | DPAK | TO-220SIS | DPAK | TO-220 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-3 Full Pack | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-3 | |
| FET Feature | - | - | - | - | |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) | 11A (Ta) | 9.7A (Ta) | 24A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 10V | 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 50 V | 1350 pF @ 25 V | 700 pF @ 300 V | 2250 pF @ 300 V | |
| Drain to Source Voltage (Vdss) | 100 V | 550 V | 600 V | 650 V | |
| Mounting Type | Surface Mount | Through Hole | Surface Mount | Through Hole | |
| Vgs(th) (Max) @ Id | 2.5V @ 300µA | 4V @ 1mA | 3.7V @ 500µA | 4V @ 1.02mA | |
| Vgs (Max) | ±20V | ±30V | ±30V | ±30V | |
| Power Dissipation (Max) | 75W (Tc) | 45W (Tc) | 80W (Tc) | 190W (Tc) | |
| Package | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tube | |
| Rds On (Max) @ Id, Vgs | 10.6mOhm @ 20A, 10V | 630mOhm @ 5.5A, 10V | 430mOhm @ 4.9A, 10V | 110mOhm @ 12A, 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V | 25 nC @ 10 V | 20 nC @ 10 V | 40 nC @ 10 V | |
| Base Product Number | TK110P10 | TK11A55 | TK10P60 | - | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Operating Temperature | 175°C | 150°C (TJ) | 150°C (TJ) | 150°C |
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