In stock: 10271 pcs
| Part Number |
TK110N65Z,S1F
 |
TK10J80E,S1E
 |
TK10S04K3L(T6L1,NQ
 |
TK110P10PL,RQ
|
|
|---|---|---|---|---|---|
| Manufacturer | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | Toshiba Semiconductor and Storage | |
| Vgs(th) (Max) @ Id | 4V @ 1.02mA | 4V @ 1mA | 3V @ 1mA | 2.5V @ 300µA | |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | |
| Supplier Device Package | TO-247 | TO-3P(N) | DPAK+ | DPAK | |
| Power Dissipation (Max) | 190W (Tc) | 250W (Tc) | 25W (Tc) | 75W (Tc) | |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 12A, 10V | 1Ohm @ 5A, 10V | 28mOhm @ 5A, 10V | 10.6mOhm @ 20A, 10V | |
| Package / Case | TO-247-3 | TO-3P-3, SC-65-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Series | DTMOSVI | π-MOSVIII | U-MOSIV | - | |
| Operating Temperature | 150°C | 150°C (TJ) | 175°C (TJ) | 175°C | |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) | 10A (Ta) | 10A (Ta) | 40A (Tc) | |
| FET Feature | - | - | - | - | |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V | 46 nC @ 10 V | 10 nC @ 10 V | 33 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 650 V | 800 V | 40 V | 100 V | |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 300 V | 2000 pF @ 25 V | 410 pF @ 10 V | 2040 pF @ 50 V | |
| Vgs (Max) | ±30V | ±30V | ±20V | ±20V | |
| Package | Tube | Tube | Tape & Reel (TR) | Tape & Reel (TR) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 6V, 10V | 4.5V, 10V |
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