TC8220K6-G

MOSFET 2N/2P-CH 200V 12VDFN

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RFQ
Specifications
Part Number:TC8220K6-G
Manufacturer:Micrel / Microchip Technology
Description:MOSFET 2N/2P-CH 200V 12VDFN
RoHs Status:
Nkesp Part Number:73D-TC8220K6-G
Part Status14733 pcs
Manufacturer:Micrel / Microchip Technology
Vgs(th) (Max) @ Id:2.4V @ 1mA
Technology:MOSFET (Metal Oxide)
Supplier Device Package:12-DFN (4x4)
Series:-
Rds On (Max) @ Id, Vgs:6Ohm @ 1A, 10V
Power - Max:-
Package / Case:12-VFDFN Exposed Pad
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:56pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:-
FET Feature:-
Drain to Source Voltage (Vdss):200V
Current - Continuous Drain (Id) @ 25°C:-
Configuration:2 N and 2 P-Channel
Base Product Number:TC8220
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In stock: 14733 pcs

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Data sheet

Product Comparison

Part Number TC8220K6-G
TC8220K6-G
FDMS9408
FDMS9408
SI5903DC-T1-GE3
SI5903DC-T1-GE3
UPA606T-T1-A
UPA606T-T1-A
ManufacturerMicrochip TechnologyFairchild SemiconductorVishay SiliconixRenesas Electronics America Inc
Package / Case12-VFDFN Exposed Pad-8-SMD, Flat LeadSOT-23-6
Current - Continuous Drain (Id) @ 25°C--2.1A100mA
Mounting TypeSurface Mount-Surface MountSurface Mount
Gate Charge (Qg) (Max) @ Vgs--6nC @ 4.5V-
Drain to Source Voltage (Vdss)200V-20V50V
PackageTape & Reel (TR)BulkTape & Reel (TR)Bulk
Power - Max--1.1W300mW
Operating Temperature-55°C ~ 150°C (TJ)--55°C ~ 150°C (TJ)150°C (TJ)
TechnologyMOSFET (Metal Oxide)-MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds56pF @ 25V--16pF @ 5V
Base Product NumberTC8220FDMS940SI5903UPA606
Configuration2 N and 2 P-Channel-2 P-Channel (Dual)2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs6Ohm @ 1A, 10V-155mOhm @ 2.1A, 4.5V25Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id2.4V @ 1mA-600mV @ 250µA (Min)-
FET Feature--Logic Level GateLogic Level Gate
Series-*TrenchFET®-
Supplier Device Package12-DFN (4x4)-1206-8 ChipFET™6-Minimold

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