SUM50020E-GE3

MOSFET N-CH 60V 120A TO263

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Specifications
Part Number:SUM50020E-GE3
Manufacturer:Vishay Siliconix
Description:MOSFET N-CH 60V 120A TO263
RoHs Status:
Nkesp Part Number:73D-SUM50020E-GE3
Part Status12614 pcs
Manufacturer:Vishay Siliconix
Vgs(th) (Max) @ Id:4V @ 250µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-263 (D²Pak)
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:2.2mOhm @ 30A, 10V
Power Dissipation (Max):375W (Tc)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package:Tape & Reel (TR)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Input Capacitance (Ciss) (Max) @ Vds:11150 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs:128 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Base Product Number:SUM50020
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In stock: 12614 pcs

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Product Comparison

Part Number SUM50020E-GE3
SUM50020E-GE3
SUM50P10-42-E3
SUM50P10-42-E3
SUM60N10-17-E3
SUM60N10-17-E3
SUM50020EL-GE3
SUM50020EL-GE3
ManufacturerVishay SiliconixVishay SiliconixVishay SiliconixVishay Siliconix
PackageTape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)Tape & Reel (TR)
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V4.5V, 10V6V, 10V4.5V, 10V
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Power Dissipation (Max)375W (Tc)18.8W (Ta), 125W (Tc)3.75W (Ta), 150W (Tc)375W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA3V @ 250µA4V @ 250µA2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs128 nC @ 10 V160 nC @ 10 V100 nC @ 10 V126 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)36A (Tc)60A (Tc)120A (Tc)
Supplier Device PackageTO-263 (D²Pak)TO-263 (D²Pak)TO-263 (D²Pak)TO-263 (D²Pak)
Rds On (Max) @ Id, Vgs2.2mOhm @ 30A, 10V4.2mOhm @ 14A, 10V16.5mOhm @ 30A, 10V2.1mOhm @ 30A, 10V
FET Feature----
Base Product NumberSUM50020SUM50SUM60SUM50020
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
SeriesTrenchFET®TrenchFET®TrenchFET®TrenchFET®
Vgs (Max)±20V±20V±20V±20V
Drain to Source Voltage (Vdss)60 V100 V100 V60 V
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Input Capacitance (Ciss) (Max) @ Vds11150 pF @ 30 V4600 pF @ 50 V4300 pF @ 25 V11113 pF @ 30 V
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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