STW55NM60ND

MOSFET N-CH 600V 51A TO247-3

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Specifications
Part Number:STW55NM60ND
Manufacturer:STMicroelectronics
Description:MOSFET N-CH 600V 51A TO247-3
RoHs Status:
Nkesp Part Number:73D-STW55NM60ND
Part Status4148 pcs
Manufacturer:STMicroelectronics
Vgs(th) (Max) @ Id:5V @ 250µA
Vgs (Max):±25V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:TO-247-3
Series:FDmesh™ II
Rds On (Max) @ Id, Vgs:60mOhm @ 25.5A, 10V
Power Dissipation (Max):350W (Tc)
Package / Case:TO-247-3
Package:Tube
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Input Capacitance (Ciss) (Max) @ Vds:5800 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
FET Type:N-Channel
FET Feature:-
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:51A (Tc)
Base Product Number:STW55N
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In stock: 4148 pcs

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Data sheet

Product Comparison

Part Number STW55NM60ND
STW55NM60ND
STW50N65DM6
STW50N65DM6
STW52N60DM6
STW52N60DM6
STW56N65M2-4
STW56N65M2-4
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
SeriesFDmesh™ IIMDmesh™ DM6-MDmesh™ M2
Drain to Source Voltage (Vdss)600 V650 V600 V650 V
TechnologyMOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)MOSFET (Metal Oxide)
Vgs (Max)±25V±25V±25V±25V
Power Dissipation (Max)350W (Tc)250W (Tc)357W (Tc)358W (Tc)
Rds On (Max) @ Id, Vgs60mOhm @ 25.5A, 10V91mOhm @ 16.5A, 10V74mOhm @ 22.5A, 10V62mOhm @ 24.5A, 10V
PackageTubeTubeBulkTube
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Vgs(th) (Max) @ Id5V @ 250µA4.75V @ 250µA4.75V @ 250µA4V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds5800 pF @ 50 V52500 pF @ 100 V2468 pF @ 100 V3900 pF @ 100 V
Base Product NumberSTW55NSTW50STW52STW56
Operating Temperature150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)150°C (TJ)
Drive Voltage (Max Rds On, Min Rds On)10V10V10V10V
FET Feature----
Current - Continuous Drain (Id) @ 25°C51A (Tc)33A (Tc)45A (Tc)49A (Tc)
Package / CaseTO-247-3TO-247-3TO-247-3TO-247-4
Supplier Device PackageTO-247-3TO-247 Long LeadsTO-247-3TO-247-4
FET TypeN-ChannelN-ChannelN-ChannelN-Channel
Gate Charge (Qg) (Max) @ Vgs190 nC @ 10 V52.5 nC @ 10 V52 nC @ 10 V93 nC @ 10 V

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